Abstract: A method of recovering source signals from an equal number of mixed signals including components of the source signals. Channel one and two mixed signals are multiplied by channel one and two adaptive weights to produce channel one and two product signals, respectively. A channel one filtered feedback signal is generated from a channel two approximation signal and a channel two filtered feedback signal is generated from a channel one approximation signal. The channel one filtered feedback signal is added to the channel one product signal to produce the channel one approximation signal and the channel two filtered feedback signal is added to the channel two product signal to produce the channel two approximation signal. A nonlinear function is applied to the approximation signals to produce output signals. The adaptive weights and the filtered feedback signals are adjusted to maximize entropy of the output signals.

Abstract: An apparatus (100) including a support structure (104), a flexible stamp (106) having a stamping surface (110) including a predetermined pattern disposed opposite the support structure (104), a pressure controlled chamber (112) disposed above the support structure (104), and a mechanical attachment (114) affixed to the flexible stamp (106).

Abstract: An organic EL device comprises a cathode, an electron transporting layer (ETL), a hole transporting layer (HTL) and an anode which are laminated in sequence, wherein the materials making up the ETL and HTL are so selected that the energy barrier for hole injection from the HTL to the ETL is substantially higher than the energy barrier for electron injection from the ETL to the HTL. The organic EL device obtained has efficient light emission from the HTL layer when an efficient fluorescent dye as an emitter is doped in the HTL or the part of the HTL close to the ETL/HTL interface.

Abstract: A phosphor for low voltage applications including a plurality of light-emitting particles being made from a UV-excitable light-emitting phosphor, a diffusion barrier being formed as a film on the light-emitting particles, and a coating of an electron-excitable UV-emitting material being formed on the diffusion barrier. A method for making a low voltage phosphor including the steps of (i) providing a UV-excitable light-emitting phosphor (ii) forming a diffusion barrier on the UV-excitable light-emitting phosphor via sol-gel techniques (iii) forming, via sol-gel techniques, a film of an electron-excitable UV-emitting material on the diffusion barrier.

Abstract: A method of forming a stable semiconductor device on an at least partially completed semiconductor device including a supporting semiconductor structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer structure. A relatively thin layer of Ga.sub.2 O.sub.3 is deposited on the surface by evaporation using a high purity single crystal of material including Ga.sub.2 O.sub.3 and a second oxide, such as MgO or Gd.sub.2 O.sub.3. A second layer of material with low bulk trap density relative to the Ga.sub.2 O.sub.3 is deposited on the layer of Ga.sub.2 O.sub.3 to complete the dielectric layer structure.

Abstract: A conjugate polymer with fluorescent dye molecules built in as fluorescent centers is used in light emitting devices with improved fluorescent efficiency. In a first example, fluorescent dyes are introduced into a conjugated polymer precursor by a nucleophilic substitution reaction. In a second example, the fluorescent dye molecules are introduced into a conjugated polymer precursor by an ion-exchange reaction. In both examples, the conjugated polymer precursors with dye molecules attached are converted to the conjugated polymer with built-in fluorescent centers.

Abstract: A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.

Abstract: A method of fabricating an LED array including epitaxially and sequentially growing a conductive layer on a substrate, a first carrier confinement layer, an active layer, a second carrier confinement layer and a conductive cap. Selectively etching the cap to provide exposed surface areas defining row and column areas with a matrix of diodes positioned in rows and columns therebetween. Implanting a first impurity in the row areas to form vertical conductors extending through the second confinement, active and first confinement layers to provide surface contacts to each diode. Implanting a second impurity in the row and column areas through the second confinement and active layers to form an isolating resistive volume around each diode. Implanting a third impurity in the row areas through the second confinement, active, and first confinement layers and into the substrate to form an isolating resistive volume between each row of diodes.

Abstract: A substrate (103) having a first stack of DBRs (106), an active region (118), and a second stack of DBRs (138) is provided. An etch mask (146) is formed on the second stack of DBRs (138) and etched. The second stack of DBRs (138), the active region (118), and a portion of the first stack of DBRs (106) are subsequently etched. A portion of the etch mask (146) is removed from the etch mask (146). A material layer (202, 302) is then selectively deposited on portions of the second stack of DBRs (138), the active region (118), and the first stack of DBRs (106) by either selective epitaxial over-growth or mass-transfer processes, thereby passivating the VCSEL (101).

Abstract: A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region (24) near a gate insulator (17). The increased depletion region width improves the breakdown voltage.

Abstract: A magnetic memory utilizes a magnetic material to concentrate a magnetic field in a magnetic memory cell element. The magnetic material reduces the amount of current required to read and write the magnetic memory.

Abstract: A heterojunction tunnel diode with first and second barrier layers, the first barrier layer including aluminum antimonide arsenide. A quantum well formation is sandwiched between the first and second barrier layers, and includes first and second quantum well layers with a barrier layer sandwiched therebetween, the first quantum well layer being adjacent the first barrier layer. The first quantum well layer is gallium antimonide arsenide which produces a peak in hole accumulations therein. The second quantum well layer produces a peak in electron accumulations therein. A monolayer of gallium antimonide is sandwiched in the first quantum well layer at the peak in hole accumulations and a monolayer of indium arsenide is sandwiched in the second quantum well layer at the peak in electron accumulations.

Abstract: Ultra-small semiconductor devices and a method of fabrication including patterning the planar surface of a substrate to form a pattern edge (e.g. a mesa) and consecutively forming a plurality of layers of semiconductor material in overlying relationship to the pattern edge so that a discontinuity is produced in the layers and a first layer on one side of the pattern edge is aligned with and in electrical contact with a different layer on the other side of the pattern edge.

Abstract: A sensor (10, 40) for measuring the ratio of fluids or other materials in mixture (12) utilizes a coplanar resonator. The resonator has an outer conductor or conductor plane (17, 41) that is on a semiconductor substrate (11). The conductor plane (17, 41) has an opening (18, 48) that exposes a portion of the surface of the substrate. An inner conductor or sensing element (19, 42) is formed on the exposed surface within the opening (18, 48) so that the conductor plane (17, 41) and the sensing element (19, 42) are coplanar. The sensing element (19, 42) is coupled to an input (22) of a transistor (21) to form an oscillator. The oscillator frequency varies as the ratio of materials in the mixture (12) varies.

Abstract: A two dimensional array of organic LEDs including laterally spaced, conductive strips positioned on an insulative substrate with a layer of dielectric material positioned thereon and defining cavities therethrough so as to expose areas of the conductive strips within the cavities. At least a layer of active emitter material and a layer of a low work function metal are positioned in each of the cavities on the conductive strips so as to form an LED in each cavity with the conductive strips forming a first electrode of each LED. A layer of metal is sealing positioned over each of the cavities and formed into metallic strips orthogonal to the conductive strips so as to form a second electrode for each of the LEDs.

Abstract: A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A second dielectric layer (128) is formed on surface (133) of mesa (131). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of second dielectric layer (128) of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (204) on seed layer (126) for removal of heat from VCSEL (101).

Abstract: An integrated electro-optical package including an electronic circuit mounted on a substrate, first and second groups of leads extending from the circuit through a sealing area and each lead having an end exposed in a first area, transparent conductive strips positioned in the first area and each strip contacting the exposed end of a lead in the first group, an electroluminescent medium positioned on each of the strips and defining LEDs, metallic strips positioned over the electroluminescent medium as a second electrode for each of the LEDs, each metallic strip being in contact with an exposed end of an electrical lead in the second group of leads, and a hermetic seal positioned in sealing contact with the sealing area and hermetically sealing the first area.

Abstract: A display (10) has pixels organized into groups (11, 41) that operate in parallel. Each group (11, 41) distributes the frame time (25) of the display over the number of active pixels within the group thereby maximizing the amount of time each pixel to be illuminated can be active.

Abstract: A switchable lens/diffuser including an optical component constructed to form an optical image in cooperation with light directed thereon and a layer of polymer dispersed liquid crystal material having a clear state and a diffusing state, the layer of material being positioned in conjunction with the optical component so that the optical component forms an optical image when the layer of polymer dispersed liquid crystal material is in the clear state and the layer of polymer dispersed liquid crystal material serves as a diffusing screen to form an image in cooperation with the light directed thereon in the diffusing state.

Abstract: A an electron source utilizes a novel extraction grid conductor (20,40,41) to assist in focusing an electron beam emitted by the electron source. The extraction grid conductor (20,40,41) has a collimating conductor (29,31) that separate an extraction grid section (17,21,22) of the extraction grid conductor from conducting strips (26,24,32,33) that electrically connect the extraction grid section (17,21,22) to an external voltage source. The collimating conductor (29,31) creates an electric field that prevents emitted electrons from being attracted to the conducting strips (26,24,32,33) thereby maintaining the emitted electron beam in a substantially column-like configuration.