Patents Represented by Attorney, Agent or Law Firm Eugene I. Shurko
  • Thermal conductivity enhanced semiconductor structures and fabrication processes
    Patent number: 6288426
    Abstract: Silicon is formed at selected locations on a substrate during fabrication of selected electronic components. A dielectric separation region is formed within the top silicon layer, and filled with a thermally conductive material. A liner material may be optionally deposited prior to depositing the thermally conductive material. In a second embodiment, a horizontal layer of thermally conductive material is also deposited in an oxide layer or bulk silicon layer below the top layer of silicon.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: September 11, 2001
    Assignee: International Business Machines Corp.
    Inventors: Robert J. Gauthier, Jr., Dominic J. Schepis, William R. Tonti, Steven H. Voldman