Abstract: A dynamic random access memory (DRAM) cell storage node and a fabricating method thereof are provided. A storage contact plug 118 is formed in a first insulating layer 104 on a semiconductor substrate. A second insulating layer 110, a material layer 112, and a third insulating layer 114 are sequentially formed on the first insulating layer. The material layer prevents etchant of the third insulating layer from attacking the second insulating layer. The third insulating layer, the material layer, and the second insulating layer are sequentially etched to form an opening exposing the storage contact plug and a portion of the surface of the first insulating layer. The opening is filled with a conductive layer to form a storage node 116. The third insulating layer is etched until the top surface of the material layer is exposed, and the material layer is etched until the top surface of the second insulating layer is exposed.

Abstract: A wide range voltage controlled oscillator including a voltage-to-current conversion unit generating a control current responsive to a control voltage, and an offset current generation unit generating an offset current. The offset current generation unit is responsive to the control voltage and, at certain times, is responsive to a reference voltage. An adding unit adds the control current to the offset current, and generates an oscillation control current. An oscillation unit generates the oscillation signal responsive to the oscillation control current.

Abstract: A semiconductor memory device capable of operating normally even when a failed memory cell remains after repair. The semiconductor memory device includes a plurality of memory cell array blocks, and address decoding circuitry for receiving an address and for accessing good memory cell array blocks and skipping failed memory cell array blocks.

Abstract: A ferroelectric capacitor with a ferroelectric film having a relatively larger amount of titanium constituent than zinconate constituent improves ferroelectric characteristics. The method for fabricating the ferroelectric capacitor includes the step of performing a heat treatment in an oxygen atmosphere after forming a contact opening in an insulating layer which covers an already formed ferroelectric capacitor. This heat treatment in an oxygen atmosphere can minimize undesirable side effects resulting from a platinum electrode oxidizing the ferroelectric film components.