Abstract: A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Abstract: A fuse box including make-links and a redundancy address decoder including the fuse box are provided. It is preferable that the fuse box includes a plurality of make-links for programming an address of a defective normal memory cell with an address of a corresponding redundant memory cell, and the address is a row address or a column address. The redundant address decoder includes a fuse box having a plurality of make-links for decoding an address of a defect cell and a redundant word line selection circuit for selecting a word line of a redundant cell corresponding to the address of the defect cell in response to a signal output from the fuse box.