Abstract: The present invention relates to combinations of the malaria therapeutics artemisinine, dihydroartemisinine, arteether, artemether, artesunate or other artemisinine derivatives with one or more of the antimalarials chloroquine, 10-0-methylfloxacrine, quinine, mefloquine, amodiaquine, pyrimethamine, sulfadoxine and primaquine. Synergistic actions are achieved with them on treatment of mammals, including humans, with subcurative doses of the individual substances.
Type:
Grant
Filed:
April 9, 1992
Date of Patent:
June 15, 1993
Assignee:
Hoechst Aktiengesellschaft
Inventors:
Dipak C. Chatterjee, Bindumadhavan Venugopalan, Bansi Lal, Noel J. de Souza, Richard H. Rupp
Abstract: A protein or a pharmaceutically acceptable salt thereof. The protein has a molecular weight of 10,000-30,000 Dalton, an isoelectric point greater than 9.5, and an N terminus of the sequence H-Lys-X-Phe-Lys-Val-Asp-Val-Leu-Ala-Ala-Leu-X-Phe-Asn-Ala-, wherein X is an amino acid or a tryptic cleavage product which has the sequence -Gly-Ala-Asn-Ala-Val-Asn-. Methods for the isolation and purification of the protein, compositions containing the protein, and methods for the use of the protein and compositions, are also disclosed.
Type:
Grant
Filed:
July 30, 1986
Date of Patent:
May 24, 1988
Inventors:
Klaus E. Kuettner, Dominique Tripier, Dietrich Brocks, Michael T. DiMuzio
Abstract: A charge trasfer imaging device is disclosed, which comprises photosensitive sites formed in and continuous to the surface of a semiconductor substrate for generating and storing signal charge in response to an incident light signal, a shift electrode for controlling the transfer of the signal charge through the semiconductor substrate, and a charge transfer shift register for reading out the signal charge by transferring the same from the shift electrode through transfer channels formed in and continuous to the semiconductor substrate surface. Semiconductor region of the opposite conductivity type to the semiconductor substrate is formed in the substrate other than a portion of the substrate below the photosensitive sites and at least under the transfer channels of the shift register, and a reverse bias voltage is applied between these semiconductor regions and the semiconductor substrate.
Type:
Grant
Filed:
January 27, 1983
Date of Patent:
August 21, 1984
Assignees:
Tokyo Shibaura Denki Kabushiki Kaisha, Tokyo Shibaura Denki Kabushiki Kaisha