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  • Non-volatile memory cell with precessional switching
    Patent number: 7936592
    Abstract: A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: May 3, 2011
    Assignee: Seagate Technology LLC
    Inventors: Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu, Dimitar Dimitrov, Wei Tan, Brian Seungwhan Lee