Patents Represented by Law Firm Fishman & Richardson P.C.
  • Patent number: 6144041
    Abstract: A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: November 7, 2000
    Assignee: Semiconductor Energy Laboratory, Co., Ltd.
    Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Satoshi Teramoto