Abstract: A satellite link is dynamically assigned in a communication system having a plurality of clients, each client having a unidirectional satellite receiving means and a bi-directional network communication means. Unique information of each client is stored at the managing server within a service provider. A client utilizes its network communication means to send a request to the managing server. The managing server then allocates an IP address to the client's satellite receiving means, and a satellite link is established between the client's satellite receiving means and the managing server based upon the stored unique information of the given client. The assigned IP address corresponds to the assigned satellite link, and the assigned IP address is sent from the managing server to the client utilizing the client's directional network communication means.

Abstract: An elongated and hollow wiring track includes a rectangular plastic cover whose edges carry female hinge members and a U-shaped plastic channel having a flat outer surface, two inclined side walls that extend in a common direction at 45-degrees away from the flat outer surface, and two perpendicular side walls that extend in a common direction away from the inclined side walls perpendicular to the flat outer surface. Each of the perpendicular side walls carries a male hinge member that releasably mates with a female hinge member when the U-shaped channel is pivotally mounted onto the cover to form an internal wire-cavity. A DIN rail mounted on the outer surface of the U-shaped channel. A terminal strip is mounted on an exterior surface of each of the inclined side walls. The number N of metal busses are mounted on each of the terminal strips. A plurality of terminal-groups are mounted on each of the terminal strips.

Abstract: A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C—SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C—SiC, 4H—SiC, 6H—SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.

Abstract: Athletic gloves used by a person when operating a bicycle include a plurality of three-layer palm pads that are glued to a plurality of spaced positions on the palm of each glove without the use of stitching and the like. Each of the palm pads is formed of a three-layer assembly, i.e. a relatively thin heat-activated adhesive layer, a relatively thick and intermediate synthetic foam layer, and a relatively thin synthetic leather layer. Prior to assembly of a three-layer palm pad onto the palm of a glove, each of the three layers of the palm pad assembly is of a uniform thickness. A heat press having a pattern of downward-extending metal line areas, including one metal line area that matches and completely encircles the circumferential edge of each palm pad, operates to press each palm pad down onto the palm of the glove.

Abstract: A mixture of natural gas and air is converted to a C5-C19 diesel fuel-grade liquid hydrocarbon. The natural gas and air mixture is supplied to the input of a catalytic partial oxidation reactor. The carbon-containing gas output of the catalytic partial oxidation reactor is connected as an input to a first Fischer-Tropsch reactor, to thereby form a first diesel fuel grade C5-C19 liquid hydrocarbon output. A carbon-containing gas output of the first Fischer-Tropsch reactor is connected to the input of a second Fischer-Tropsch reactor, to thereby form a second diesel fuel grade C5-C19 liquid hydrocarbon output. The catalytic partial oxidation reactor contains a platinum group catalyst, a promoted platinum group catalyst, a rhodium catalyst, or a platinum promoted rhodium catalyst. Each of the Fischer-Tropsch reactors contain a catalyst that is made up of from about 3 to about 60 parts-by-weight cobalt and from about 0.

Abstract: A chamois for use within the seat area of a cycling garment includes a non-woven polyester interfacing or batting layer with a bottom surface that engages the cycling garment. The polyester layer provides a pad area for association with the buttocks of a cycling individual, two side pad areas for association with the upper inside thighs of the individual, and a pad area for association with the lower abdominal area of the individual. A thin and low hardness synthetic foam layer has a shape that complements the polyester layer, and a bottom surface thereof engages a top surface of the polyester layer. A thick, high hardness, synthetic foam layer is associated with the thin foam layer and occupies the pad area association with the buttocks. A synthetic leather layer has a shape that complements the shape of the polyester layer and a bottom surface thereof engages the top surface of the thin foam layer and the top surface of the thick foam layer.

Abstract: A GaN boule is epitaxially grown by reacting a vapor of the metal Ga with the gas NH3 at a high temperature of about 1200-degrees C., which high temperature causes the NH3 to dissociate into the two elements N and H. A seed 51 of GaN is placed within a growth-furnace that is heated to about 1200-degrees C., and an input stream of Ga vapor and NH3 gas are directed incident on the GaN seed. An upward-facing, shower head-shaped, manifold is provided to uniformly distribute the Ga vapor and the NH3 gas to the interior of the growth-furnace at a location that is generally below and spaced from the bottom of the GaN seed. GaN vapor is thus formed within this space, generally adjacent to the surface of the boule. At the exterior surface of the GaN seed, the Ga vapor reacts with the NH3 gas to epitaxially form solid GaN on the exterior surface of the GaN seed, and to also form H2.

Abstract: A substrate cassette contains two physically spaced and parallel reels. A relatively long web of flexible substrate material is wound about one reel and the exposed end of the web is connected to the other reel, to thus expose a relatively short length of the substrate material at a deposition-plane that lies between the two reels. A first idler roller is associated with the first reel, a second idler roller is associated with the second reel, and the web is guided by the two idler rollers as the web moves between the two reels. The two idler rollers are mounted at fixed positions in order to accurately establish a fixed-position deposition-plane. The substrate cassette is placed within one or more vacuum deposition chambers, the web is advanced between the two reels, and one or more semiconductor layers are deposited on substantially the entire length of the web. A protective layer is provided as part of the web in order to protect the semiconductor layer(s) when the web is wound unto a take-up reel.

Abstract: A method and apparatus for configuring a system that includes a plurality of interconnected components that each supports service parameters for communicating with other components in the system. A determination is made as to which components support service parameters that are compatible, and groups of components having compatible service parameters are identified. Adjacent components exchange information frames that identify their service parameters. Each component compares its service parameters with those of its adjacent components to determine whether they are compatible, updating its own service parameters if necessary. Any component that updates its service parameters issues another information frame. Thus, information frames are exchanged until it is determined which components support compatible service parameters, and what service parameters are to be used for communicating among those components. Additionally, a unique address is automatically assigned to every port in the system.