Patents Represented by Attorney, Agent or Law Firm Fred Gibb
  • Patent number: 6759282
    Abstract: A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: July 6, 2004
    Assignee: International Business Machines Corporation
    Inventors: John E. Campbell, William T. Devine, Kris V. Srikrishnan