Abstract: The method of removing an epoxy bonded microelectronic component from a substrate includes the steps of heating a removal tool comprising a blade portion. The heated blade portion engages against the cured epoxy positioned around the edge of the component, and the epoxy is removed. The blade portion is positioned between an edge of the component and an adjacent portion of the substrate to lift the component from the substrate. A screwdriver receiving tip can also be attached to the removal tool. The screwdriver receiving tip includes an orifice that receives a screwdriver shaft that is freely rotatable therein. The removal tool is heated, thereby heating the screwdriver receiving tip and screwdriver shaft so that any screw to be removed is heated and removed. A tool is also disclosed for removing the microelectronic component from a substrate. The tool includes a removal tool comprising a proximal body and a distal heating end.

Abstract: A monolithic voltage clamp provides low impedance, low voltage electrostatic discharge protection for an integrated circuit without affecting the integrated circuit's DC characteristics. First, second, third, and fourth regions of semiconducting material are formed with p-n junctions between each region. A first inductor electrically connects the first and second regions, and a second inductor electrically connects the third and fourth regions. The first and second inductors should each have an inductance which is large enough to delay an increase in bypass current around their respective p-n junctions for a period which is long enough to assure that conduction is sufficient to discharge an electrostatic pulse. In a preferred embodiment, first and second reverse bias diodes are used to electrically connect the invention to one or more input/output nodes.