Patents Represented by Attorney Fujitsu Patent Centr

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  • Semiconductor device and method of manufacturing the same
    Patent number: 7960763
    Abstract: A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: June 14, 2011
    Assignee: Fujitsu Limited
    Inventor: Kozo Makiyama