Abstract: A new confocal microscope and a new device fabrication method in which linewidth control is achieved using the new confocal microscope are disclosed. This new confocal microscope has a configuration which achieves multiple passes, e.g., three, four, five, six, seven or more passes, of the incident light through the objective lens of the microscope. As a consequence, the new confocal microscope exhibits a smaller effective depth of focus and a smaller effective resolution than a conventional confocal microscope.
Abstract: A device fabrication method is disclosed in which a precursor polymeric or oligomeric material, capable of undergoing a curing reaction involving crosslinking and/or imidization, is at least partially cured and incorporated into the device being fabricated. Significantly, the at least partial curing is achieved by heating the material at generally increasing (although not necessarily continuously increasing) temperatures. In addition, the heat is supplied at a rate so that the temperature of the material is always maintained at or below the corresponding glass transition temperature of the material, which increases during the heating process.
Abstract: Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.
Type:
Grant
Filed:
December 12, 1989
Date of Patent:
October 2, 1990
Assignee:
AT&T Bell Laboratories
Inventors:
Chorng-Ping Chang, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha