Patents Represented by Attorney G. Books
  • Patent number: 5078482
    Abstract: A new confocal microscope and a new device fabrication method in which linewidth control is achieved using the new confocal microscope are disclosed. This new confocal microscope has a configuration which achieves multiple passes, e.g., three, four, five, six, seven or more passes, of the incident light through the objective lens of the microscope. As a consequence, the new confocal microscope exhibits a smaller effective depth of focus and a smaller effective resolution than a conventional confocal microscope.
    Type: Grant
    Filed: January 3, 1991
    Date of Patent: January 7, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Martin Feldman, Princess E. Simpson
  • Patent number: 4978712
    Abstract: A device fabrication method is disclosed in which a precursor polymeric or oligomeric material, capable of undergoing a curing reaction involving crosslinking and/or imidization, is at least partially cured and incorporated into the device being fabricated. Significantly, the at least partial curing is achieved by heating the material at generally increasing (although not necessarily continuously increasing) temperatures. In addition, the heat is supplied at a rate so that the temperature of the material is always maintained at or below the corresponding glass transition temperature of the material, which increases during the heating process.
    Type: Grant
    Filed: March 16, 1989
    Date of Patent: December 18, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Harvey E. Bair, Shiro Matsuoka
  • Patent number: 4960656
    Abstract: Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.
    Type: Grant
    Filed: December 12, 1989
    Date of Patent: October 2, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: Chorng-Ping Chang, Daniel L. Flamm, Dale E. Ibbotson, John A. Mucha