Abstract: A gallium arsenide device converts an ECL voltage signal to a gallium arsenide voltage signal. The device has a pair of depletion transistors for transforming the ECL voltage signal and a predetermined reference voltage into corresponding signal and reference currents to provide pull-up. A pair of enhancement transistors are connected to the pair of depletion transistor for outputting the gallium arsenide voltage signal which is representative of the ECL voltage signal. Positive feedback means for increasing the gain of the pair of enhancement transistors is provided and is connected to the pair of enhancement transistors. The predetermined reference voltage may be derived from a set voltage source or may be derived from a logical one level in the ECL circuit so as to provide temperature tracking for the gallium arsenide circuit. At least a third depletion transistor is connected to a third enhancement transistor.

Abstract: A single layer copper foil tape is provided having a center core and connected lead beams. Etched apertures are formed to separate adjacent lead beams and to form relatively high strength foil straps connecting edge portions of the foil tape and the center core. Score lines may be etched at the ends of each of the lead beams to form breakaway links at such ends. The inner ends of the lead beams are then bonded to a semiconductor die at its contact pad or bumps and the resultant subassembly aligned with inner ends of the fingers of a metal lead frame array or other set of external leads such as a pin grid array and the outer ends of the lead beams bonded to such fingers. At this point, all of the remaining portions of the foil tape are peeled or pulled off the assembly, the lead beams being separated at their breakaway links, leaving only the lead beams connecting the die and set of external leads intact.

Abstract: An oxide fuse, and method of forming same, formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15V causes Fowler-Nordheim tunneling at low temperature to damage the dielectric layer, and shorts the upper and lower electrodes together. The oxide layer is advantageously formed simultaneously with the gate oxide layer in an EEPROM.

Abstract: A threshold receiver circuit consists of a reference subcircuit and one or more signal input subcircuits. The reference subcircuit derives a mirror voltage by regulating a reference current flowing through an external reference resistor. The mirror voltage is distributed to each of the signal input subcircuits. Within each signal input subcircuit a signal transistor has its gate connected to the mirror voltage and its drain connected to a common input node, thereby causing a signal current to flow into the common input node which is proportional to the reference current. The signal current also flows through an external signal input resistor which is connected to the input node, and into the external input signal source. The input node voltage is thus equal to the input signal source voltage plus the voltage-drop across the signal input resistor. This input node voltage is compared to an internal reference voltage by a comparator which is also connected to the common input node.

Abstract: A fiber optic interferometric hydrophone is based on the change in optic path length of optic fibers bonded to both sides of a bending beam which acts as an acoustically sensitive diaphragm.The bending beam is segmented into an even number of segments, acoustic windows are arranged such that opposite sides of the beam see the acoustic field in adjacent segments, and the optic fibers cross from one side of the beam to the other to maintain the phase of strain signal for the two fibers, one on each side, along the full length of the bending beam. The fringe sensitivity of the interferometer is multiplied by two since both interferometer legs are strained by the acoustic field, and of opposite sign, and further multiplied by the number of segments compared to a single simple beam bender of the dimensions of one segment.

Abstract: The present invention relates to a novel method and apparatus which can provide continuous monitoring of the oxygen content of a gas over an indefinite period of time and at a minimal cost.In the novel apparatus of the present invention, a light source and a light sensitive detector are disposed within the atmosphere to be measured, and a polymeric film formed from a manganese tertiary phosphine polymer complex is deposited between the light source and the detector. As oxygen pressure increases or decreases a change in color intensity of the film takes place which controls passage of light from the light source to the detector. The detector in turn is suitably connected to an audio and/or visual warning device and/or a recorder which will provide the desired form of warning.

Abstract: An electrode for use in miniaturized sensor applications includes an electrically conductive element, a first layer of a salt on the surface of the conductive element having a common cation with the conductive element, a second layer of a second salt coating the first layer, the second layer having a common anion with the first layer, and a membrane covering the second layer, wherein the electrode is completely anhydrous when formed. The membrane may be selected to form either an ion selective electrode or a reference electrode.

Abstract: Method and apparatus which can provide continuous monitoring of the partial pressure of one or more gases in an atmosphere or feed stream, over an indefinite period of time and at a minimal cost. The method and apparatus of the present invention operates by monitoring the change in frequency of a piezoelectric element which has been coated with a film formed from manganese tertiary phosphine polymer complex. As the polymer absorbs or releases gas the frequency of the piezoelectric device will be altered.

Abstract: A method of generating electrical and magnetic fields in salt water marine environments using an elongated dimensionally stable flexible electrode (30) having a current carrying inner portion (31) in an outer protective and electrically conductive sheath (33) formed of ruthenium dioxide or iridium oxide. A layer of titanium cladding (33) may be provided on the inner current carrying portion (31) for carrying the outer sheath (33). The anode electrode is utilized for generating electrical current, such as for use in developing magnetic fields in salt water marine environments, preferably as an element of a sweep cable device having a floatation means around which one or more electrodes are helically wound.

Abstract: A method for depositing a micron-size metallic film on a transparent substrate by thermal deposition employing a focused visible laser. The method includes the step of positioning the substrate in a gas cell containing a metal bearing gaseous compound. A nucleation layer is formed on a surface of the substrate by either shining an ultraviolet light on the substrate surface or by heating the substrate to a temperature which is less than the temperature at which the molecules of the gaseous compound decompose. Next, a laser which may be visible or near infrared is focused onto the substrate to provide localized heating of the area of the substrate to which the beam is incident. Molecules of the gaseous compound thermally decompose on the heated area to deposit a metal film thereon.

Abstract: A method of fabricating a Schottky barrier MOSFET wherein a polysilicon gate chip is disposed adjacent the drain and source regions of a single crystal silicon substrate surface, and a metal is deposited on the top surface of the gate chip and the drain and source regions of the substrate surface by direct reaction of the silicon of the surfaces with a compound of a tungsten or molybdenum. Preferably, the sidewalls of the gate chip are masked during the deposition of metal to avoid the formation of a metal bridge between the gate and drain or the gate and source.

Abstract: An assembly for adaptively controlling vibration, shock, acceleration and position of an item mounted to the assembly independent of varying operating characteristics of the item or a support base for the assembly is provided. The assembly comprises an item to be controlled, a support platform for supporting the item, a viscous spring damper mechanically intercoupled between the item and the platform, a first accelerometer for sensing vibration, shock, acceleration and position of the item, a second accelerometer for sensing vibration, shock, acceleration and position of the support platform, a gas supply source for selectively supplying gas to the viscous spring damper, a fluid supply source for selectively supplying fluid to the viscous spring damper, and a logic control circuit for adjusting inputs from the gas supply source and the fluid supply source to selectively adjust the operation of the viscous spring damper and the dynamic mechanical coupling of the item to the platform.

Abstract: The present invention relates to novel polymer compositions and the novel method of their synthesis. The novel polymer compositions are synthesized by forming a tetrahydrofuran solution of a polymer selected from the group consisting of polyvinylchloride, polystyrene, and silicone; adding an anhydrous manganese salt of the formula:MnX.sub.2wherein X is a species capable of forming an anion, preferably a halogen or a thiocyanate, then adding to the solution of polymer and manganese salt, a phosphine of the formula:PR.sup.1 R.sup.2 R.sup.3wherein R.sup.1, R.sup.2, and R.sup.3 may be the same or different, and each is selected from the group consisting of substituted or unsubstituted alkyl, cycloalkyl or aryl groups or hydrogen, provided that no more than two of the groups R.sup.1, R.sup.2, and R.sup.3 are substituted or unsubstituted aryl groups and that at least one of the groups R.sup.1, R.sup.2, and R.sup.3 is a substituted or unsubstituted alkyl, cycloalkyl or aryl group.

Abstract: A method for depositing a micron-size metallic film on a transparent substrate by thermal deposition employing a focused visible laser. The method includes the step of positioning the substrate in a gas cell containing a metal bearing gaseous compound. A nucleation layer is formed on a surface of the substrate by either shining an ultraviolet light on the substrate surface or by heating the substrate to a temperature which is less than the temperature at which the molecules of the gaseous compound decompose. Next, a laser which may be visible or near infrared is focused onto the substrate to provide localized heating of the area of the substrate to which the beam is incident. Molecules of the gaseous compound thermally decompose on the heated area to deposit a metal film thereon.

Abstract: A method is described for treating the surface of a field-effect transistor or a Schottky barrier diode. A polysilicon surface of a gate region of an FET or a single crystalline silicon surface of a Schottky barrier diode may be treated with a low-power argon-plasma for a relatively short period of time to enhance nucleation sites on the surface of the polysilicon or single crystalline silicon. A layer of tungsten or molybdenum may be selectively deposited on the surface of the polysilicon or single crystalline silicon by chemical-vapor deposition through silicon reduction of tungsten hexafluoride or molybdenum hexafluoride.

Abstract: The subject invention is a method of sputtering a material on a substrate in which the substrate is first locally heated so that the mobility on the surface of the substrate is increased to a value E.sub.s. A material is then sputtered on the substrate with a sputtering energy E.sub.k whereby the sum of E.sub.k and E.sub.s is greater than the activation energy required for a chemical reaction to occur between the sputtered surface of the substrate and the sputtered material. In the preferred embodiment, the substrate is silicon and the material to be sputtered is a refractory metal such as titanium.