Abstract: An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes.

Abstract: An optical cross connect switch having a beam generating, beam directing, and beam receiving portions is disclosed. In one embodiment, the beam generating portion receives a number of optical fibers and generates a communication and companion alignment beam for each fiber. The communication and alignment beams may be spatially separated, substantially collimated beams, and are aligned to propagate away from the beam generating portion in substantially parallel paths. The communication and alignment beams then strike a beam directing element where they may be redirected to the beam receiving portion. A beam receiving portion includes a plurality of optical output fibers, each having an associated position sensor. The location where the alignment beam strikes the position sensor provides position information regarding the corresponding communication beam. Using the position information, the beam directing elements may be finely adjusted to direct the focused communication beam onto an optical output fiber.