Abstract: The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.
Type:
Grant
Filed:
August 10, 2001
Date of Patent:
February 18, 2003
Assignee:
STMicroelectronics S.A.
Inventors:
Joseph Borel, Jean-Pierre Schoellkopf, Constantin Papadas