Patents Represented by Attorney Gary Honeycutt
  • Patent number: 4358982
    Abstract: A tone generator for electronic musical instruments, useful in particular for the modular composition of an electronic organ, comprising a plurality of inputs corresponding to a keyboard octave of the musical instrument. The inputs are connected to a plurality of groups of analog modulators which receive, respectively, tone signals produced by a tone generator and submultiples thereof produced by a plurality of toggles according to the number of footages desired on the output of the groups of modulators. The tone generator includes an audio frequency modulator having a high modulation index with full modulation depth remaining substantially constant over the whole supply voltage range.
    Type: Grant
    Filed: January 31, 1980
    Date of Patent: November 16, 1982
    Assignee: Texas Instruments Incorporated
    Inventor: Massimo Di Pietro
  • Patent number: 4358340
    Abstract: A method for the fabrication of submicron devices, without the use of submicron lithography. Vertical "zero undercut" etching techniques are employed, in order to convert the submicron thickness of a deposited thin film conductor layer and a thin film insulation layer into submicron gate widths that can be used in a wide variety of devices, including MOS field effect devices, for example. The conversion is achieved by depositing a thin film conductor layer of submicron thickness across a vertical step between adjacent insulator surfaces, and then vertically etching until the only remaining portion of the conductor layer is that portion adjacent the vertical step. The remaining insulation not covered by conductor is then removed. Thus, an insulated gate is provided having a submicron width approximately equal to the thickness of the conductor layer as initially deposited.
    Type: Grant
    Filed: July 14, 1980
    Date of Patent: November 9, 1982
    Assignee: Texas Instruments Incorporated
    Inventor: Horng-Sen Fu
  • Patent number: 4352125
    Abstract: A matrix array of objects, for example, semiconductor bars, is located on a carrier such as an XY table and the objects are successively brought into the field of view of a television camera to produce digitized video signals which are utilized in effecting precise alignment of the object with respect to a reference point. Following this alignment step, an electronic analysis is made, again on the basis of digitized video signals, to confirm the presence of an object in the aligned position, and that the object is complete. In the event a complete object is determined to be present in the aligned position, further analysis may be made, also on the basis of digitized video signals to determine whether the object has a surface identification mark indicating that the object is a reject.
    Type: Grant
    Filed: January 28, 1980
    Date of Patent: September 28, 1982
    Assignee: Texas Instruments Deutschland GmbH
    Inventor: Friedrich Guth
  • Patent number: 4345243
    Abstract: Apparatus for rounding of a character produced as a character segment matrix pattern for display on a raster scanned display in which a read-only memory storing the character segment matrix patterns for the characters to be displayed is arranged to produce the entire matrix pattern for a selected character in parallel at any one time. A parallel gating means selects from the matrix pattern a selected row of the matrix and also the immediately preceding row or the immediately following row depending upon which is required at the time for character rounding. The bits of the selected row are applied in parallel to a first shifting register and the bits of both rows produced by the gating means are applied in parallel to a character rounding logic circuit which is arranged to detect the presence of diagonal lines in the character and produce the appropriate rounding elements.
    Type: Grant
    Filed: July 2, 1980
    Date of Patent: August 17, 1982
    Assignee: Texas Instruments Incorporated
    Inventor: Robert Parsons
  • Patent number: 4341272
    Abstract: This invention relates to a valve assembly (drawing) which will hereafter be referred to as drill pipe freer, comprising a metal ball, hollow in the center, and of such design that it will float in liquid, or a floating solid plastic ball of such design and hardness to withstand the pressures to be encountered during operation of the invention, and a specially designed valve body with seat for the metal or plastic ball. The said valve body will be pumped down inside the string of drill pipe and collars within the well bore to anchor at drilling bit at lower end of drill pipe string. The said metal or plastic ball is then pumped down to seat itself within the said valve body seat, closing off the mud circulation (drilling fluid) which normally flows through drill pipe and out drilling bit and back up annulus of well bore. This sudden cessation of downward flow of drilling fluid will provide a water hammer blow to dislodge drill pipe lodged in off-bottom positions within well bore.
    Type: Grant
    Filed: May 20, 1980
    Date of Patent: July 27, 1982
    Inventor: Joseph S. Marshall
  • Patent number: 4322738
    Abstract: A buried n-channel junction field-effect transistor (JFET) fabricated in standard bipolar integrated circuit starting material. The transistor has a deep p-well as the bottom gate formed in an n-type body. The source is surrounded by the p-well while the drain is the epitaxial layer near the surface of the body outside the p-well. A buried channel connects the source and drain. A p-layer above the buried channel forms the top gate. Gate leakage current and noise are very low.
    Type: Grant
    Filed: January 21, 1980
    Date of Patent: March 30, 1982
    Assignee: Texas Instruments Incorporated
    Inventors: Kenneth M. Bell, Joe R. Trogolo
  • Patent number: 4305083
    Abstract: A single charge injector, floating gate memory cell wherein the injector diode is defined by an ion implanted region of opposite conductivity type from that of the semiconductor substrate and by a diffused region having the same conductivity type as but higher conductivity than the substrate. Equal hole and electron injection efficiencies can be obtained from this single charge injector. A three terminal access cell having a compact structure is obtained by use of a thick oxide read transistor located between the injector diode and the bootstrap capacitor. The read transistor together with a single address transistor for the cell are connected to the injector diode.
    Type: Grant
    Filed: September 7, 1979
    Date of Patent: December 8, 1981
    Assignee: Texas Instruments Incorporated
    Inventor: Jean M. Gutierrez
  • Patent number: 4301470
    Abstract: A matrix array of semiconductor bars is located on an X-Y table and the bars are successively brought into the field of view of a television camera for precise alignment with respect to a reference point. The video signals corresponding to an image of the bar and its peripheral area are digitized to produce digitized video signals predominantly of a first level corresponding to surface area of the bar and of a second level corresponding to the peripheral areas. The digitized video signals are analyzed in data window sets, there being one data window set associated with a single edge of the image of the object, for each of the X and Y directions, corresponding to separate regions of the video image having in the associated axial direction predetermined distances from each other and different distances from an associated edge of the image of the object.
    Type: Grant
    Filed: March 17, 1980
    Date of Patent: November 17, 1981
    Assignee: Texas Instruments Deutschland
    Inventor: Volker Pagany
  • Patent number: 4283247
    Abstract: The liquid phase epitaxial growth of a magnetic garnet film is obtained by providing a circulating flux solution of the material, wherein spaced apart zones are maintained at different temperatures, above and below the saturation point; and by placing a preheated substrate in contact with the supersaturated zone, wherein a suitable growth temperature is maintained. This system avoids the prior need for heating and cooling the entire solution as a single, thermally uniform zone, and thereby achieves a substantial savings in time which permits at least a ten-fold increase in production rates, without increasing manpower or capital investment.
    Type: Grant
    Filed: June 21, 1979
    Date of Patent: August 11, 1981
    Assignee: Texas Instruments Incorporated
    Inventors: Rodney A. Roques, Gene F. Wakefield
  • Patent number: 4279690
    Abstract: This invention deals with the fabrication of radiation emitting diodes having a small diameter shaped integral microlens formed by etching. Initially an oxide layer is deposited on the backside of the processed slice; then a ring pattern is opened in the oxide. An etch is used to form a ring groove with a mesa in the center. The center oxide dot over the mesa is removed and the etching continued to round off the edges of the mesa and to form a smooth shaped structure. Various shapes and diameters may be achieved with different ring dimensions and with different etch times.
    Type: Grant
    Filed: September 19, 1977
    Date of Patent: July 21, 1981
    Assignee: Texas Instruments Incorporated
    Inventor: Eugene G. Dierschke
  • Patent number: 4260908
    Abstract: A high power microelectronic switching circuit is interfaced with a fiberoptic data link, whereby inductive or resistive loads up to 20 amperes are switched, with a forward voltage drop of less than one volt. An input signal of one-half milliwatt is passed to the gate of a V-MOS FET power device, which drives a PNP output transistor to switch a power supply to a circuit load.
    Type: Grant
    Filed: August 30, 1978
    Date of Patent: April 7, 1981
    Assignee: Texas Instruments Incorporated
    Inventors: Joe D. Mings, Manuel L. Torreno, Jr.
  • Patent number: 4223275
    Abstract: A voltage current transactor including a pair of cross-coupled current generators fed with equal currents from a constant current source. The current generators comprise cascaded bipolar transistor current mirrors in which current magnification is achieved by use of emitter multiplication. The output current is controlled only by the input voltage. Both the input port and output port are isolated in terms of identification (return paths) and while the input port can act on the output port, the reverse is not true. The device functions as a mid-identified current source wherein the current outputs are in anti-phase but independent of each other. The overall transconductance of the circuit can be programmed over a wide range by means of a single external resistor.Typical applications of the transactor to provide linear amplification, differentiation, integration with integration constant and gyrator functions are described.
    Type: Grant
    Filed: October 6, 1978
    Date of Patent: September 16, 1980
    Assignee: Texas Instruments Incorporated
    Inventor: Carl S. den Brinker