Abstract: The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conduction, rendering one power electrode of the bipolar transistor open. Means provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.
Type:
Grant
Filed:
September 30, 1983
Date of Patent:
October 15, 1985
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration