Abstract: An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second As semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) structure has a semiconductor bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal mirror layer interposed between the bottom DBR and the substrate, wherein the metal mirror layer and bottom DBR are adapted to form a first mirror of the laser structure; and a reaction barrier layer interposed between the metal mirror layer and the bottom DBR, wherein the reaction barrier layer is adapted to reduce reaction between the metal mirror layer and the bottom DBR. A phase matching layer is interposed between the reaction barrier layer and the bottom DBR to adjust the phase of radiation reflected by the metal mirror layer such that an increased overall reflectance is obtained. The VCSEL is fabricated by bonding a first metal bonding layer formed over the bottom DBR and a metal mirror layer on a first substrate to a second metal bonding layer formed on a second substrate.