Abstract: An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.
Type:
Grant
Filed:
July 15, 1999
Date of Patent:
July 24, 2001
Assignee:
The United States of America as represented by the Secretary
of the Navy
Inventors:
Mohammad Fatemi, Alma E. Wickenden, Daniel D. Koleske, Richard Henry, Mark Twigg