Abstract: Fusion protein including a fusion part and a protein of interest, the combination of the two proteins leading to the fusion protein being secreted into a supernatant of a bacterial host with the protein of interest being present in its correct three-dimensional structure. Nucleic acid including a sequence coding for a fusion protein, the sequence including: —F—Asm—Rn—Y—, where F is a nucleic acid sequence coding for an amino acid sequence which allows secretion of a protein encoded by Y into a fermentation medium, As is a chemical bond or a nucleic acid sequence comprising a codon, m is an integer from 0–10, R is a chemical bond or an arginine codon, n is 0 or 1, and Y is a nucleic acid sequence coding for a protein of interest. Processes therefor.

Abstract: Human and murine analogs of DUBs, hematopoietic-specific, cytokine-inducible deubiquitinating proteases, clustered on chromosome 7 and and their respective regulatory regions are identified. The nucleotide or proteins encoded thereby may be used in assays to identify inhibitors of hDUB7, human deubiquitinating enzyme, or mDUB7, mouse deubiquitinating enzyme. The invention also includes transducing peptides comprising an NLS, nuclear localization signal, or transducing sequence of hDUB7 or mDUB7 linked to a cargo molecule, and methods of delivering a biologically active protein, therapeutically effective compound, antisense nucleotide, or test compound to a cell wherein a transducing peptide is added exogenously to a cell.

Abstract: Form a semiconductor device with dielectric, isolation structures in a top surface of a silicon semiconductor substrate, separating the substrate into emitter, NMOS and PMOS areas. Form a gate oxide layer above the isolation structures on the top surface of the silicon semiconductor substrate. Form a conductive polysilicon layer above the thin silicon oxide layer. Mask the NMOS and PMOS regions of the substrate with an emitter mask having a window over the emitter area of the substrate. Ion implant emitter dopant into a portion of the conductive polysilicon layer over the emitter area of the substrate through the window in the emitter mask. Strip the emitter mask. Anneal the substrate including the thin silicon oxide layer, and the polysilicon layer to drive the dopant into an emitter region in the emitter area in the substrate. Form doped source/drain regions and a base in the emitter area of the substrate.