Abstract: Charge transfer devices are adapted to provide all possible forms of combinational logic functions by using combinations and variations of a basic state inversion-bit regeneration element. This basic element employs electrically floating means in the vicinity of a charge transfer device to sense the presence or absence of charge therein and to control the transfer of a newly-generated amount of charge away from an independent source.

Abstract: To improve the control over resistivity of grown single crystalline ingots, to reduce the turn-around time between growth of successive ingots in a particular crystal grower and to enable recycling of otherwise junk material, a sample of a molten material (the "melt") from which the ingot is to be grown is withdrawn from the crystal grower, cooled, and analyzed. Based on the analysis, controlled additional amounts of the material and/or a dopant impurity are added directly to the melt to restore it to a desired chemical composition. Thus, avoidable is costly and time-consuming cooling of the melt and restarting the system with a completely new charge of material and impurity, and achievable is uniformity of resistivity among the successively grown ingots. Preferably the sample is withdrawn from the melt into a quartz tube which is inserted into the system through a port.