Abstract: Method and apparatus for locating the centroid along a line section of an ion beam in a vacuum chamber, requiring no moving parts and requiring only two electrical conductors passing through the wall of the vacuum chamber. An array of Faraday cup current sensors is positioned along a line in the path of the beam at predetermined distances from a reference point, so that each sensor intercepts a component of the beam. A first plurality of resistors each has one end connected to one of the beam current sensors, has a value proportional to the distance between the beam current sensor to which it is connected and the reference point, and has its other end connected to a first common point. A second plurality of resistors having values equal to each other each has one end connected to one of the beam current sensors, has a value much greater than the largest of the first plurality of resistors, and has its other end connected to a second common point.

Abstract: Refractory metals or ceramics are diffusion bonded or densified by assembling the workpieces to be bonded, wrapping the assembly with carbon yarn, heating the wrapped assembly, cooling the assembly and unwrapping. The expansion of the workpieces together with the shrinking of the carbon yarn produces tremendous pressures which cause bonding and densifying of the workpiece.

Abstract: A platen and beam setup assembly for use in an ion implanter includes a platen for wafer mounting and a beam setup flag for beam measurement. The platen and the setup flag are angularly displaced with respect to a common mounting shaft perpendicular to the ion beam. The assembly can be rotated about the shaft between a first position wherein the wafer is exposed to the ion beam and a second position wherein the setup flag is exposed to the ion beam. In a preferred embodiment, the platen is positioned for wafer exchange when the setup flag is exposed to the ion beam.

Abstract: A logarithmic rf amplifier includes a plurality of cascaded stages each including a differential amplifier which performs full-wave rectification of the rf signal and a circuit for providing a video signal representative of the full-wave rectified rf signal. The logarithmic amplifier further includes a circuit for supplying rf signals of equal amplitude and opposite polarity to the inputs of the first differential amplifier stage and a circuit for summing the video signals from each of the stages and providing a logarithmic video output. The amplifier exhibits extremely fast pulse response and clean limiting.

Abstract: A modular wafer processing system requires a gate valve of minimum thickness. A gate valve is provided in which the gate is an assymetric wedge on an assymetrically mounted drive shaft.

Abstract: A planar magnetron sputtering device has an extended flat circular target source in opposed spaced parallel relationship with a generally flat article to be coated, placed within an evacuated coating chamber. Crossed electric and magnetic fields in the chamber are established in order to set up a plasma adjacent the target. The magnetic field is provided by a magnetic assembly of permanent magnets on the non-vacuum side of the target. The magnetic assembly is smaller in diameter than the target, but is mounted to a means for moving the assembly laterally over the entire area of the target. This means for moving sweeps the magnetic assembly in an eccentric path generally centered on the target center, with the path being non-reentrant and precessing about the target center with time. In this manner, the path sweeps different areas on successive rotations about the center, and a given area of target is exposed to the magnetic field at many successively different orientations.

Abstract: A ferromagnetic film for magnetic recording comprises a copper substrate having particles of iron and iron oxides dispersed in the surface layer of the copper. The particles have maximum dimensions in the range between 50 and 500 Angstroms. The ferromagnetic film can be formed by ion implantation of iron ions into the copper substrate followed by heat treatment to permit growth of ferromagnetic particles to the desired size. As an alternative to ion implantation, the iron can be deposited on the copper substrate by sputtering or evaporation and mixed with the copper by ion beam mixing.

Abstract: An improved microprocessor-controlled autosampler for use in liquid chromatography is shown. The autosampler is fully programmable by the operator and capable of performing complex sample preparation routines. A spring-loaded sample needle is employed to ensure that the needle makes contact with the bottom of the sample vial as required, for example, when handling extremely small samples. A hollow vial lifter serves as the receptacle for waste wash solvent eliminating the need for a special waste receptacle mechanism. Other improved features include a plurality of interchangeable, codable sample racks, a four-way valve in the syringe line enabling rapid priming/purging of the hydraulics, and as improved vial stabilizer design.

Abstract: In order to compensate for worn or distorted wafer cassettes and missing wafers, the cassette of wafers is scanned through a beam. The timing of the interruptions of the beam is used to inventory the wafers present and measure the exact position of each wafer relative to the base of the cassette.

Abstract: An automatic sample injector for high pressure liquid chromatography, utilizing a cassette-like holder of a plurality of sample columns and an automatic injection unit which sequentially and successively advances the cassette and removes each sample therefrom in accordance with the test to be conducted on the sample. The cassette-like sample carrier utilizes a plurality of sample columns disposed in line with each other, with the body of the cassette being unsymmetrical to prevent reversal thereof in the injection machine. The injection machine, when a sample cassette is placed thereon, automatically advances the cassette to the first sample column, connects the column to the chromatographic or other system, removes the sample therefrom, decouples the sample tube from the system and again advances the cassette to the next sample tube therein for similar processing thereof.

Abstract: Increased spatial sensitivity (FIGS. 4) or spatial tolerance (FIGS. 1) in selectively manipulated NMR sample analysis is excited from a spatially inhomogeneous FR field using pulse sequences which operate to exclude all spins deviating from a selected initial orientation (FIGS. 4 and 5) or to inclusively extend the applicable flip angles over a range of initial spin orientation (FIGS. 1).

Abstract: A chemical vapor deposition apparatus includes a gas mixing chamber and a water-cooled reaction chamber with adjustable water-cooled baffle between them. A wafer is clamped face down to a chuck and an inert gas such as helium is forced between the chuck and the wafer to insure proper heat conduction from chuck to wafer. The chuck can be radiantly heated from above and operated in a plasma-enhanced mode. A wafer loading apparatus driven by a computer is isolated by a loadlock during deposition to enhance cleanliness. The chamber can be plasma cleaned to reduce downtime.

Abstract: A wafer processing system including wafer handling arms incorporated into vacuum isolation valves is described. A loadlock with elevator and optical sensors is used to inventory and position a cassette of wafers. The wafers in the cassette can be randomly accessed. A computer is used to control the system according to a task status table independent of time sequence.

Abstract: A pattern generator for supplying beam deflection and blanking signals in an electron beam lithography system which writes polygon pattern features by sweeping a beam of rectangular cross-section over each polygon and simultaneously varying the length of the rectangular cross-section. The pattern generator converts polygon size and shape data to an upper shape signal and a lower shape signal. The shaping signals are subtracted to provide a beam length signal. The lower shape signal controls the beam position during writing of the polygon. The pattern generator further includes a ramp generator for sweeping the beam over the polygon. The ramp signal and shaping signals are synchronized by detecting the points in the sweep at which polygon turn points occur. The shape signal generators utilize interleaved operation for high speed. A blanking circuit provides uniform exposure of pattern features by controlling the width of the rectangular beam.

Abstract: Diamonds are good thermal conductors and also good insulators. They are thus exceptionally useful as heat-removing supports for small microwave circuit elements which must be electrically insulated from their ultimate heat sink. Bonding diamonds to metallic parts has been done using active metals such as titanium and zirconium in conjunction with or as ingredients in solder alloys, which then are able to wet the diamond surface and bond to it.The invention comprises a method of diffusion bonding to diamonds without a molten solder. This solves the problem of contaminating the open diamond surfaces with braze materials which produce electrical leakage. Also the bonded area is precisely limited so that the electrical properties of the circuit are not disturbed.A tiny slow-wave circuit for a traveling-wave tube has been supported by a linear array of diamonds bonded to it and to the surrounding heat-sink barrel of the tube.

Abstract: A system for scanning a beam of charged-particles across a target is described which compensates for energy dispersion in the beam. A time-varying magnet with circular pole pieces is used to sweep the beam left to right. Two wedge-shaped magnet dipoles, one on each side of the center line are used to bend the beam parallel to the center line and compensate for beam energy dispersion.

Abstract: A small volume electron capture detector has a cylindrical cell 120 inside which there is provided a generally funnel-shaped insert structure 130 having a cup-shaped section and a cylindrical section. The rims of the cup-shaped section nearly touch the inner walls of the cell 120 so as to separate the active volume from the areas at the top corners of the cell 120 which are not actively swept by the carrier gas, thus reducing the tailing of chromatographic peaks.

Abstract: A method and apparatus for use in gas chromatography for confirming the presence of compounds in the sample. By directly comparing the transient decay time domain signals of the sample and of known compounds as detected in an ion cyclotron resonance mass spectrometer connected to the chromatographic column, one is able to effect sample confirmation without the computer intensive processes of Fourier transformation and analysis of the resulting mass spectrum.

Abstract: Semiconductor wafers are coated with metallic film by supporting the wafers individually adjacent a ring-shaped sputtering source. A vacuum chamber sputter coating apparatus has a number of work stations therein, at least one of which includes the ring-shaped sputtering source. Also included is a load lock; and an intermittently rotating vertical plate-like wafer carrier therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clips. A chamber door is provided with a vacuum chuck to grasp a wafer presented vertically by a blade-like elevator which cooperates with a cassette and conveyor moving the cassette along a horizontal path below the chamber entrance.

Abstract: Disclosed are a method and apparatus for rapidly heating a thermionic vacuum tube cathode, thereby enabling the vacuum tube to be placed in useful operation shortly after the tube is switched on. Rapid heating of the cathode is achieved by passing current through the cathode, thereby directly heating it. Simultaneously, the cathode is also heated by an indirect radiant heater and by electron bombardment by electrons emitted from the heater. When the cathode reaches its operating temperature, the direct heating current and the electron bombardment are stopped and the cathode is maintained at its operating temperature by the indirect heater alone. Cathode warm-up times of less than 1 second may be attained using this invention.