Abstract: An electronic signal level detection system and method are provided. The method receives an analog input signal having a variable voltage and compares the input signal voltage to a threshold. A detection signal is generated for input signal voltages exceeding the threshold in a periodic first time frame. In a second periodic time frame (following the first time frame), a count is updated in response to the generated detection signals. The count is used to create a metric representative of the difference between the input signal voltage and the threshold. The count is incremented in response to the generating a detection signal (“1”) in the first time frame, and decremented in response to not generating a detection signal (“0”) in the first time frame.

Abstract: A method for annealing amorphous silicon film to produce polycrystalline film suitable for thin-film transistors fabricated on glass substrates is provided. The method involves using the selective location of nickel on a predetermined region of silicon to define the pattern of the lateral growth front as the silicon is crystallized. The method defines the resistivity of the silicide formed. The method also defines a specific range of nickel thicknesses to form the nickel silicide. A minimum thickness ensures that a continuous layer of nickel silicide exists on the growth front to promote an isotropic lateral growth front to form a crystalline film having high electron mobility. A maximum thickness limit reduces the risk of nickel silicide enclaves in the crystalline film to degrade the leakage current. Strategic placement of the nickel helps prevent nickel silicide contamination of the transistor channel regions, which degrade the leakage current.