Abstract: An ophthalmic laser system includes a laser source, to generate a pulsed laser beam, an XY scanner, to receive the pulsed laser beam, and to output an XY-scanning beam, scanned in two directions essentially transverse to an optical axis, and a multi-functional Z scanner, to receive the XY-scanning beam, to output an XYZ-scanning beam, having a numerical aperture NA and a focal spot in a target region, and to modify the numerical aperture NA essentially independently from scanning a Z focal depth of the focal spot along the optical axis.

Abstract: A laser system for ophthalmic surgery includes a laser source, to generate a pulsed laser beam, an XY scanner, to receive the pulsed laser beam, and to output an XY-scanning beam, scanned in two directions transverse to a Z axis, a Z scanner, to receive the XY-scanning beam, and to output an XYZ-scanning beam, scanned in addition along the Z axis, the Z scanner including a first lens group to output a beam having an intermediate focal plane, and a movable lens group to receive the beam through the intermediate focal plane and to collimate the beam in a variable manner, and an objective to receive the collimated beam from the Z scanner and to focus the beam into a focal spot in a target region.

Abstract: Techniques and systems for gradient search are provided based on sensing or measuring at selected locations of a target object without performing full-field sensing or measuring over the entire field of the target object. Search methods are provided to include determining a coordinate of a boundary of a region in relation to a loop in a proximity of a first location, determining a direction of a gradient of the coordinate corresponding to the first location, and selecting a second location based on the determined direction. A search system can be implemented to include an imaging system to determine a coordinate of a feature of an object on a loop in a proximity of a first location, and a controller, coupled to the imaging system, to determine a direction of a gradient of the coordinate corresponding to the first location, and to select a second location based on the determined direction.

Abstract: A spectrometer is presented that can include a spectrally dispersive optical element to spectrally disperse a received light, a leveraged-optics adjustable deflector to adjustably deflect the spectrally dispersed light, and a detector array to receive the spectrally dispersed and adjustably deflected light. The received light can include an interference beam combined from a returned image beam and a reference beam in a Spectral Domain Optical Coherence Tomograph. The detector array can include a linear sensor array. The leveraged-optics adjustable deflector can include an optical element with an adjustable transmissive property or an adjustable reflective property, wherein the adjustable deflector is adjustable by a mechanical adjustment being optically leveraged into a smaller optical adjustment.

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract: The cells of a memory cell array are programmed in a pair wise manner. The pairs are separated by at least one memory cell, reducing the possibility of interference between the pairs during programming. The memory cells are programmed individually by applying a relatively high voltage to one of the bit lines of each cell regardless whether the cells are to be programmed or not, while applying a lower voltage to the second bit lines, depending on whether the cells are to be programmed or not. This programming voltage assignment enhances the speed of programming. Furthermore, the pair wise programming scheme applies the necessary high voltages only half as often as in previous schemes to program all the cells of the array, increasing the lifetime of the memory system.

Abstract: A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

Abstract: The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Abstract: A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

Abstract: A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been deposited on the surface of the p-type GaN layer. In some applications, the oxidized metal provides sufficient lateral conductivity to eliminate the conventional requirement of a second highly conductive contact metal, such as gold. If the second contact metal is desired, an anneal in an oxygen-free environment is performed after deposition of the second layer. The anneal causes the second metal to penetrate the oxidized metal and to fuse to the surface of the p-type GaN layer. In a second embodiment, the oxidation occurs only after at least one of the two metals is deposited on the surface of the p-type GaN layer.