Abstract: A monolithic microelectronic array structure includes a microelectronic integrated circuit array having a first plurality of microelectronic integrated circuit elements each deposited on a front side of a substrate. The substrates are physically discontinuous so that each substrate comprises a substrate island which is physically separated from the other substrate islands. The monolithic microelectronic array structure optionally includes a first plurality of input/output elements with a respective input/output element associated with and directly connected to each of the microelectronic integrated circuit elements, and a second plurality of electrically conductive interconnects extending between the microelectronic integrated circuit elements of adjacent substrate islands. The monolithic microelectronic array structure may be planar, or it may be curved.
Type:
Grant
Filed:
May 15, 2001
Date of Patent:
September 24, 2002
Assignee:
Raytheon Company
Inventors:
William J. Hamilton, Jr., Michael Ray, Eli E. Gordon, Christopher L. Fletcher, Ronald W. Berry