Abstract: An electron beam blanking method and system for selectively interrupting the flow of electrons during an electron beam lithographic process minimizes electron beam movement during blanking as the electron beam reaches a target lithographic mask. A first deflection plate pair deflects electrons flowing in the electron beam in the direction of the target lithographic mask. The first deflection plate pair includes a first tapered gap that is formed so that electrons which enter the first tapered gap before the initialization of a blanking voltage experience progressively greater electric field as they pass through the plates for controlling the cumulative deflection as the electrons travel through the first deflection plate pair.
Type:
Grant
Filed:
March 3, 1999
Date of Patent:
August 21, 2001
Assignee:
DuPont Photomasks, Inc
Inventors:
Michael J. Penberth, Graham S. Plows, Adam Woolfe