Abstract: A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Abstract: A quick stop device for abruptly interrupting the cutting of a workpiece by a cutter is disclosed. The quick stop device employs an outer housing connected to an inner workpiece holder by at least one shear pin. The outer housing includes an appropriate shank designed to be received in the spindle of a machine, such as a machine tool. A cutter, such as a drill bit, is mounted in a stationary position and the workpiece, mounted to the workpiece holder, is rotated during engagement with the cutter. A trigger system includes at least one spring loaded punch disposed for movement into engagement with the workpiece holder to abruptly stop rotation of the workpiece holder. This action shears the shear pin and permits continued rotation of the spindle and outer housing without substantially disturbing the chip root formed during cutting.

Abstract: A coaxial hyperthermia applicator for applying non-invasively electromagnetic energy to a body against which it is placed. The coaxial applicator antenna has formed integrally within it a non-invasive radiometric antenna for receiving thermoelectromagnetic emissions. The coaxial-configured applicator produces a bell-shaped radiation pattern symmetric about the axis of symmetry of the coaxial applicator. Integrating the radiometric antenna within the coaxial applicator produces a single device that performs dual functions. The first function is to transmit non-invasively energy for heating a subcutaneous tumor. The second function is to receive non-invasively thermal electromagnetic radiation from the tumor by which temperature is sensed and fed back to control the output of the coaxial applicator.

Abstract: Ion-induced Nuclear Radiotherapy (INRT) is a technique for conducting radiosurgery and radiotherapy with a very high degree of control over the spatial extent of the irradiated volume and the delivered dose. Based upon the concept that low energy, ion induced atomic and nuclear reactions can be used to produce highly energetic reaction products at the site of a tumor, the INRT technique is implemented through the use of a conduit-needle or tube which conducts a low energy ion beam to a position above or within the intended treatment area. At the end of the conduit-needle or tube is a specially fabricated target which, only when struck by the ion beam, acts as a source of energetic radiation products. The inherent limitations in the energy, and therefore range, of the resulting reaction products limits the spatial extent of irradiation to a pre-defined volume about the point of reaction.

Abstract: Novel rinse troughs accomplish thorough uniform rinsing. The tanks are suitable for one or more essentially planar items having substantially the same shape. The troughs ensure that each surface is rinsed uniformly. The new troughs also require less rinse fluid to accomplish a thorough rinse than prior art troughs.

Abstract: A method and apparatus for treating material surfaces using a repetitively pulsed ion beam. In particular, a method of treating magnetic material surfaces in order to reduce surface defects, and produce amorphous fine grained magnetic material with properties that can be tailored by adjusting treatment parameters of a pulsed ion beam. In addition to a method of surface treating materials for wear and corrosion resistance using pulsed particle ion beams.

Abstract: The intensity and phase of one or more ultrashort light pulses are obtained using a non-linear optical medium. Information derived from the light pulses is also used to measure optical properties of materials. Various retrieval techniques are employed. Both "instantaneously" and "non-instantaneously" responding optical mediums may be used.

Abstract: An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.

Abstract: Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

Abstract: A secondary battery having a rechargeable lithium-containing anode, a cathode, and a separator positioned between the cathode and anode with an organic electrolyte solution absorbed therein is provided. The anode comprises three-dimensional microporous carbon structures synthesized by the controlled pyrolysis of gel derived polymer foam precursors. The gradual heating process in the carbonization of pretreated foam precursors stabilizes the pore structures in the pretreated foam.

Abstract: A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Abstract: An electron beam focusing system, including a plural slit-type Faraday beam trap, for measuring the diameter of an electron beam and automatically focusing the beam for welding. Beam size is determined from profiles of the current measured as the beam is swept over at least two narrow slits of the beam trap. An automated procedure changes the focus coil current until the focal point location is just below a workpiece surface. A parabolic equation is fitted to the calculated beam sizes from which optimal focus coil current and optimal beam diameter are determined.

Abstract: A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Abstract: Methods and apparatus for thermally altering the near surface characteristics of a material are described. In particular, a repetitively pulsed ion beam system comprising a high energy pulsed power source and an ion beam generator are described which are capable of producing single species high voltage ion beams (0.25-2.5 MeV) at 1-1000 kW average power and over extended operating cycles (10.sup.8). Irradiating materials with such high energy, repetitively pulsed ion beams can yield surface treatments including localized high temperature anneals to melting, both followed by rapid thermal quenching to ambient temperatures to achieve both novel and heretofore commercially unachievable physical characteristics in a near surface layer of material.

Abstract: A back-contacted solar cell having laser-drilled vias connecting the front-surface carrier-collector junction to an electrode grid on the back surface. The structure may also include a rear surface carrier-collector junction connected to the same grid. The substrate is connected to a second grid which is interdigitated with the first. Both grids are configured for easy series connection with neighboring cells. Several processes are disclosed to produce the cell.

Abstract: A monolithically integrated photonic circuit combining a semiconductor source of excitation light with an optically active waveguide formed on the substrate. The optically active waveguide is preferably formed of a spin-on glass to which are added optically active materials which can enable lasing action, optical amplification, optical loss, or frequency conversion in the waveguide, depending upon the added material.

Abstract: A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

Abstract: An apparatus and method are described for analyzing an integrated circuit (IC), The invention uses a focused light beam that is scanned over a surface of the IC to generate a light-induced voltage alteration (LIVA) signal for analysis of the IC, The LIVA signal may be used to generate an image of the IC showing the location of any defects in the IC; and it may be further used to image and control the logic states of the IC. The invention has uses for IC failure analysis, for the development of ICs, for production-line inspection of ICs, and for qualification of ICs.

Abstract: A secondary battery having a rechargeable lithium-containing anode, a cathode and a separator positioned between the cathode and anode with an organic electrolyte solution absorbed therein is provided. The anode comprises three-dimensional microporous carbon structures synthesized from polymeric high internal phase emulsions or materials derived from this emulsion source, i.e., granules, powders, etc.