Abstract: In order to test, in particular, BGA (Ball Grid Array) contacts, the free contact pin end is formed as a suction tube in which a reduced pressure that acts on the end area of the free contact pin end can be produced. If the diameter of the suction tube is less than the diameter of the component contact with which contact is to be made, a mechanical and electrical contact can be produced by sucking an approaching component contact onto the end area of the contact pin end, without having to exert pressure on the rear face of the component.

Abstract: A heat exchanger, such as an evaporator, a condenser, or the like, for a refrigerator, such as a chill cabinet, a freezer cabinet or the like, includes at least one surface with which a thermal energy storage medium is in at least as far as possible heat-conducting contact, and bag-like reception containers to be connected to the evaporator.

Abstract: Provided, in combination, is a device for turning sheet-like material, with an impression cylinder for guiding the sheet-like material, the impression cylinder being preceded by a first transfer cylinder and followed by a second transfer cylinder, the sheet-like material being receivable on an outer jacket surface of the impression cylinder so as to be printable by a third transfer cylinder, and further included are a storage device, and a device for imparting a deformation in the sheet-like material during entry thereof into the storage device and while the sheet-like material is gripped at an edge thereof; and a printing unit and a multicolor rotary printing machine, respectively, provided with the combination.

Abstract: A method for producing a re-releasable bond between two wafers which is stable at high temperatures and mechanically stable is described. The two wafers to be bonded are placed one on top of the other in such a way that a surface of the first wafer is disposed on a surface of the second wafer. Interspaces at least partially connecting the surfaces are created between the wafers. A liquid glass compound is introduced into the interspaces in such a way that a liquid glass film wetting the inner surfaces of the interspaces is formed, in which process voids that are connected to the atmosphere surrounding the wafers remain inside the interspaces wetted with the liquid glass compound. To transform the wetting liquid glass film into a solid silicon dioxide film, the wafers lying one on top of the other are subjected to a temperature treatment.

Abstract: A high temperature fuel cell has a cathode which comprises at least a first layer and a second layer disposed on one side of the first layer, in which the first layer contains 30 to 60% by weight of a first electrolyte made up of zirconium oxide ZrO2 and at least one proportion of scandium oxide Sc2O3, and the second layer comprises substoichiometric lanthanum strontium manganate having the formula LaxSryMnO3 in which the sum of x and y is less than 1. By means of this, a high ionic conductivity is achieved for the cathode (6). The ionic conductivity further remains substantially constant as a function of the operating time t.

Abstract: A device for reducing the noise emissions of a machine for printing flat material, wherein flat material is transportable across an impression cylinder, comprising at least one muffling element disposed across a portion of a transport path of the flat material extending along the impression cylinder, directly behind or downline from a nip, as viewed in the direction of the transport path, and at a spaced distance from the impression cylinder; and a machine including the device.

Abstract: The invention relates to a method for operating a household dishwasher, said dishwasher comprising a washing compartment, which is filled by a fresh water supply line, said supply line being provided with an inlet valve, a circulating pump that is connected to the washing compartment on the suction side and to at least one spray device on the delivery side; an evacuation pump, which is connected to the washing compartment on the suction side and to a discharge line on the delivery side, and a program control device, which also contains control units for controlling the pumps. The aim of the invention is to provide a simple way of partially replacing the washing liquid without any unnecessary consumption of water or energy. To this end, both pumps are operated in order to partially replace the washing liquid and the quantity of washing liquid to be pumped out and replaced is determined using the speed of the variable-speed circulating pump.

Abstract: The memory cells of a DRAM are refreshed such that the temporal sequence of the control signals for triggering the information refresh operation for the individual memory cells is set in accordance with the respective maximum retention time for the information in the memory cell.

Abstract: A patterned conductive layer and a structure via which a transistor can be driven, e.g. a word line, are disposed one above the other. A vertical conductive structure, e.g. a spacer, connects a first source/drain region of the transistor to the conductive layer, with which it forms a first capacitor electrode which has a large effective area in conjunction with a high packing density. A capacitor dielectric is disposed over the vertical conductive structure and the conductive layer, and a second capacitor electrode is disposed over the capacitor dielectric. The vertical conductive structure may be disposed on a first sidewall of the first source/drain region and a gate electrode of the transistor may be disposed on an adjoining second sidewall of the first source/drain region. The circuit configuration may form a DRAM cell configuration.

Abstract: There is disclosed a method for clamping a semiconductor wafer, preferably suitable for a wafer with a diameter of 300 mm or larger. After depositing at least one encapsulating material layer over the front side and backside of the wafer, the material layer over the front side of the wafer is etched selectively to form a predetermined structure in following process steps. Wafer warpage is caused as a result of unequal wafer bowing stress of the material layer. By removing the material layer over the backside of the wafer partially or completely in accordance with the desired reduction of the bowing stress wafer warpage is reduced. In a further course of the manufacturing process, the semiconductor device is clamped electrostatically, physically or by use of vacuum.

Abstract: A cast part, for example, for use as an internal coating of a vehicle. The cast part has a bearing layer, which is compressed and made of natural fibers bound together by a binding agent. A decorative layer is disposed on an upper surface of the bearing layer and on a lower surface of the bearing layer, a sealing layer, on which functional elements are molded in the form of fixing clips and reinforcing ribs is disposed. The case part is made according to a process consisting in compressing a natural fiber matting containing a binding agent into the bearing layer having either a plane surface or a contour and, in a second forming step, shaping the decorative material located in a upper half of a forming tool as well as a thermoplastic material applied to a lower half of the forming tool for forming the sealing layer and the functional element formed therefrom.

Abstract: A circuit configuration with an integrated amplifier is described. The amplifier has an output stage that is connected to a supply potential terminal and a reference potential terminal. A pair of complementary output transistors couples the amplifier with a tri-state output. Given an interruption of an operating-current supply that is connectible to the reference and supply potential terminals, the tri-state output is put into a high-impedance state by the circuit configuration. To this end, two blocking transistors are provided, which can be supplied by respective charge pump circuits. For instance, for sensor applications in which a high operational reliability is required, the present circuit configuration prevents the misinterpretation of measurement results given disturbances, for a small outlay.

Abstract: A semiconductor configuration is described and has a temperature sensor, which measures a temperature of a semiconductor module. The measured temperature is provided to a control unit, so that the control unit can adapt a refresh cycle in the semiconductor module to the retention time corresponding to the measured temperature.

Abstract: In some process contexts it is desirable to maintain a constant strain on the web instead of constant tension. The novel system measures the caliper of the web material and adjusts the tension to achieve the desired constant strain. The caliper may be measured by monitoring the radius of the expiring web reel in connection with the angular position of the reel. The web caliper is input into a control scheme that includes an algorithm determining the appropriate tension to applied to the web in accordance with its caliper. The control scheme outputs a variable force command to a dynamic dancer which adjusts the web tension and thus sets the constant web strain. The variable force may be injected via an air cylinder, a hydraulic cylinder, a spring with a dynamic ground, or an electromagnetically driven actuator.

Abstract: A configuration containing a sensor for accident detection, a downstream control device, a downstream firing device and a firing element for a restraint device is described. The control device generates a control signal that is composed of a first current in one direction and a subsequent second current in the opposite direction. The firing device has an integration device for integrating the first current, and also an enable device, which is connected downstream of the integration device and serves for enabling firing of the firing element. The firing of the firing element is effected by the second current when or after a limit value of the integral of the first current has been reached.

Abstract: A method for checking the operational readiness of a valve determines at least one measured value for a valve-specific parameter and compares it with a previously fixed value. The measured value is determined in a cold and unpressurized state of the valve and is compared with a value that is determined analytically from a function model of the valve, for the valve-specific parameter. An upper and a lower limiting value which are fixed for this analytically determined value are assigned to states of the valve that are still tolerable (design reserve). It is indicated that the valve is operationally ready when the measured value is between the upper and the lower limiting value.

Abstract: A front-loading washing machine includes a tub having a rear wall with an inside surface, an outside surface, and a center, a bearing sleeve connected to the rear wall, a shaft disposed in the bearing sleeve and at the center of the rear wall, a motor connected to the outside surface of the rear wall at a distance from the center of the rear wall, a gear mechanism connected to the shaft and to the motor, and a laundry container mounted in a floating manner to the bearing sleeve through the shaft. The motor produces a torque and the gear mechanism transmits the torque produced by the motor to the shaft. The motor drives the laundry container. If the laundry container has a filling opening inclined upward, then the motor is disposed beneath the shaft in a region between the tub rear wall and a rear wall of the washing machine.

Abstract: MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structure A MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction. Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.

Abstract: A method for processing signals composed of data symbols that are each separated from one another by a guard interval. Such signals are used for digital television transmission, for example. The guard intervals results in that gaps in the flow of recovered data are produced at the reception end. These gaps are prevented by extending evaluation of the symbols to the duration of the guard interval. This allows an additional buffer store to be dispensed with.

Abstract: A method for decontaminating a surface includes the steps of bringing a surface of a component formed of an unalloyed steel or a low-alloy steel into contact with a solution containing an oxalic acid for dissolving a contaminated layer from the component. Ions of divalent iron in the solution instantly form a protective layer on exposed surfaces. Iron(III) oxalate is converted into iron(II) oxalate and carbon dioxide by irradiation with UV light in order to provide ions of divalent iron. Subsequent to dissolving the contaminated layer, the protective layer is dissolved by lowering the level of the ions of the divalent iron in the solution. The ions of the divalent iron and the substance having caused the contaminated layer are bound to an ion exchange resin.