Abstract: A multilayered thin film structure comprising layers of resistive and conductive materials on a substrate, said layers including tantalum nitride, palladium and gold. A layer of titanium nitride, is used between the tantalum nitride and palladium layers to act as an adhesive layer, to prevent undercutting during etching, and to allow all metal depositing to be performed during one step.
Type:
Grant
Filed:
July 5, 1979
Date of Patent:
October 7, 1980
Assignee:
GTE Automatic Electric Laboratories Incorporated