Abstract: An m-input/n-output (e.g. 1×1, 1×2, 2×2) optical fiber switch includes a switch substrate formed with v-grooves in which singlemode fibers are disposed with their ends operatively arranged in relation to a deflecting mirror to transmit or receive optical signals. To prevent misalignment between the optical paths defined by these singlemode fibers, a lens is fused to directly to each of the singlemode fiber ends to eliminate the need for separate collimating lens and create a stable and dimensionally invariable interface between the fiber and the lens, resulting in a more compact optical switch arrangement.

Abstract: A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.

Abstract: A metallic structural panel having a plurality of internal passages separated by supporting ribs and its method of fabrication. The fabrication assembly of the metallic structural panel is essentially comprised of a housing defining an internal cavity, a plurality of internal tubes, a means for segregating the internal cavity into a pressurized and an evacuation section and a means for establishing a pressure differential between the pressurized and evacuation sections. The metallic structural panel is superplastically formed and diffusion bonded such that independent passages are formed between supporting ribs within the internal cavity of the housing. Embodiments of the fabrication assembly for manufacturing metallic structural panel are also provided which produced a curved structural panel. These embodiments utilize a curved housing along with either curved end plates or curved internal tubes, depending on whether the supporting ribs are desired to be straight or curved, respectively.

Abstract: A semiconductor active waveguide optical crossbar switch to allow optical signals to be routed to any number of ports with no net attenuation of signal strength. The optical crossbar switch is comprised of a network of optical waveguides wherein both lateral and transverse carrier confinement is provided. Redirection of the optical waveguide is accomplished by means of total internal reflectance turning mirrors. Furthermore, the optical waveguides are formed such that electrical current may be applied to the semiconductor structure to amplify the optical signal travelling therein. Electro-absorption switches formed from distinct metallic contacts overlying portions of the optical waveguides amplify the optical signal travelling through the waveguide underneath the switch if sufficient electrical stimulation is applied to the switch.

Abstract: A hand held laser apparatus containing a semiconductor laser diode switchably connected to a power supply. The output of the laser diode is focused and collimated by a pair of lens. Circuitry is provided to allow for either continuous wave or pulsed modes of operation as well as the capability of varying the pulsewidth of the laser. A guide laser or a light emitting diode is provided to guide the operator. The power level of the guide laser is limited so that it transfers minimal power to the workpiece but provides a visible line of laser light along which the output of the semiconductor laser diode will travel. A photodetector may be positioned between the laser diode and the lenses. Additionally, the amount of current delivered to the laser in continuous wave mode of operation or the pulse width and duty cycle of a pulse may be measured and displayed.

Abstract: A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region.

Abstract: A feed network for a multiterminal antenna which provides excitation to the antenna independent of ground. The feed network provides a voltage differential between terminals of the antenna instead of between a common ground point and a terminal so that the antenna achieves enhanced broadband performance via an attached balun for each coaxial cable. The feed network is comprised of a base, through which a plurality of coaxial connector extend, and a plurality of printed circuit boards positioned so as to define a centerline through the feed network. The printed circuit boards have a first side having a first, wide twin lead and a second side having a second, narrow twin lead such that the electrical signals conducted by the feed network are balanced between each pair of first and second twin leads. The twin leads of the printed circuit board are electrically connected to a corresponding connector of the plurality of coaxial connectors.

Abstract: There is provided by this invention an open-ended cavity microwave applicator apparatus for inducing current into an electrically conductive workpiece to be heated without need for the the applicator to be in contact with the workpiece. The microwave applicator is comprised of an open-ended housing that defines a cylindrical cavity which is coupled by an aperture to a waveguide which transmits the microwave energy from a microwave generator to the cylindrical applicator cavity. The microwave applicator is designed to operate in a subset of the circular TE.sub.mnp modes where m, n and p are the number of half wavelength variations in the standing wave pattern in the .theta., r,and z directions, respectively. The particular subset desired is the one in which m is equal to zero such that no current flows from the applicator to the electrically conductive workpiece. Of the subset of axially symmetric modes, TE.sub.0np, the preferred mode of operation is circular TE.sub.011.

Abstract: A capillary-tube energy-exchange system for transferring energy to or from an aircraft surface is comprised of inlet and exhaust manifolds interconnected by a plurality of Teflon capillary tubes. Fluid, either liquid or gas, is transferred from the inlet manifold through the capillary tubes to the exhaust manifold. During the fluid's flow, energy is transferred, typically from a warm fluid to an outer skin, in order to protect the aircraft's surface from ice accretions. The capillary tubes may be connected directly to ports formed in the manifolds; or, preferably, a chamber may be formed between the manifolds and the ends of the capillary tubes in order to transfer fluid therethrough. The energy-exchange system may be either an open or closed system.

Abstract: A hybrid lens for collimating, with low optical aberrations, an asymmetrically diverging input wavefront. The hybrid lens has a front surface which serves to diffract the input wavefront and a back surface which serves to refract the wavefront. Embodiments are described comprised of either a single plano-convex optical lens or a pair of lenses, one of which is a plano lens and the other or which is plano-convex. In either alternative, the convex surface is spherical. The planar surface of the single plano-convex lens or the back lens surface of the plano lens is optimized such that each ray of light from a diverging input light source will travel the same optical path length in reaching a predetermined collimation plane. This optimization is done by means of binary optic technology which uses a reactive-ion etch to form the requisite eight-level binary optic diffraction pattern.

Abstract: Disclosed herein is a semiconductor laser device comprised of a semiconductor substrate having deposited thereon at least one quantum well active region comprised of an alloy of the group consisting of GaInAsP and AlGaInAs sandwiched between upper and lower confinement layers of AlGaInAsP alloy. The laser device is further comprised of AlGaInP cladding layers.

Abstract: A semiconductor device structure capable of expanding a laser beam in one-dimension, collimating an expanding beam or focusing a nearly collimated beam. This semiconductor structure is typically comprised of three portions: a rib waveguide portion to propagate a beam of light in the quantum well region beneath the rib, an expansion region which incorporates a wider rib structure to allow the propagating beam to expand, and a rib etched lens portion to collimate the expanded beam of light. The shape of the rib etched lens portion is determined by Fermat's principle such that the optical pathlengths travelled by each ray of light are equated at a collimation plane positioned tangentially with the surface of the rib etched lens at the point at which an on-axis beam of light would strike the surface of the rib etched lens.

Abstract: A semiconductor laser device comprised of GaInP/AlGaInP materials which efficiently produces visible light output with improved carrier confinement and decreased threshold current density levels. The laser diode uses a strained quantum well positioned between a pair of graded index confinement layers which are in turn positioned between a pair of cladding layers. The active region is preferably comprised of Ga.sub.y In.sub.1-y P and the confinement layers are graded index layers comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is linearly graded from 0.40 to a maximum value selected from the range of 0.8 to 1.0 in a direction away from the active region. The cladding layers are comprised of (Al.sub.x Ga.sub.1-x).sub.0.51 In.sub.0.49 P in which the value of x is selected from the range 0.8 to 1.0. Bounding layers may be interdisposed between active region and the confinement layer on either side of the active region. The bounding layers are thin layers comprised of (Al.sub.

Abstract: A one-dimensional semiconductor laser array assembly typically comprising a one-dimensional semiconductor laser array, a heatsink upon which the laser array is bonded, and a lens assembly. The one-dimensional semiconductor laser array consists of a plurality of emitters with each emitter electrically connected in parallel to a power supply. The bonding agent, typically silver epoxy, must be of a uniform thickness so that the laser array is aligned properly upon the heatsink. The lens assembly is typically comprised of a refractive lens, typically of a bi-convex design, and a one-dimensional array of binary optical elements. The one-dimensional array of binary optical elements is designed such that each element has a front surface having a binary optic diffractive element etched thereon. The refractive lens and the one-dimensional array of binary optical elements are aligned and held in place by means of ears protruding from the heatsink.

Abstract: An avalanche photodiode array comprising a plurality of photosensitive regions in a light sensitive body with each photosensitive region having a semiconductor junction. Between said photosensitive regions, there are a plurality of low response regions separating the photosensitive regions. A plurality of wedged shaped regions having a reflective coating on their surface are placed on the light sensitive body to cover the low response regions and to reflect incident light rays towards a photosensitive region; such incident light rays typically arriving at the photosensitive regions at angles of grazing incidence. Back reflector regions having a reflective coating on their surface are positioned about the periphery of the light entry surface to reflect light incident thereon to a photosensitive region.

Abstract: A laser diode apparatus for initiating explosives or other pyrotechnic devices that has capability of checking both the laser diode operation and the optical fiber continuity between the laser diode source and the explosives required to be detonated. Power isolation circuits are provided to control the flow of current to the laser diode, also isolation filters are used to allow only the command signals to initiate the firing circuits employed.

Abstract: A semiconductor ridge diode laser, capable of providing a single mode, high power laser output having a low divergence in the far field, comprised of a plurality of semiconductor layers having three quantum wells therein. The layers of the diode laser are doped such that the PN junction occurs in or near the center quantum well. A pair of graded index layers surround each quantum well to provide transverse optical confinement. In addition to linear grading of the index of refraction in the graded index layers, stepped changes in the index of refracton or other profile types changes such as a parabolic grading may also be used. The P-side of the diode laser is etched to form a ridge with which electrical contact may be maintained to confine the optical signals laterally.

Abstract: There is provided by this invention an apparatus for combining a reflected image in a heads-up-display system with an unobstructed view of the outside world and a system for providing a heads-up-display. The heads-up-display system utilizes a dielectric combiner in order to eliminate flare and increase the system's mechanical stability. The combiner apparatus is comprised of a transmissive substrate and a plurality of dielectric layers which selectively reflects light within a narrow range of wavelengths. The use of dielectric thin films provides a mechanically stable and durable combiner element for a heads-up-display system while eliminating the deleterious effects of flare present in combiner elements utilizing a holographic optical element.

Abstract: An end-effector apparatus, used in combination with a machining device and robotic arm, for use in template-guided robotic machining a workpiece. The end-effector apparatus includes a holding means which holds a guide bushing against the machining template in a consistent orientation with a constant force independent of the orientation of the end-effector apparatus. The end-effector apparatus further includes two separate means for translational travel of the machining device. This translational travel allows the machining device cutting element to controllably follow substantial contour changes along the periphery of the template with a minimal number of spatial coordinates required to be programmed within an interfacing computer.

Abstract: A laser diode apparatus for initiating explosives or other pyrotechnic devices that has capability of checking both the laser diode operation and the optical fiber continuity between the laser diode source and the explosives required to be detonated. Power isolation circuits are provided to control the flow of current to the laser diode, also isolation filters are used to allow only the command signals to initiate the firing circuits employed.