Patents Represented by Attorney, Agent or Law Firm H. Daniel Schnurumann
  • Method for self-aligned vertical double-gate MOSFET
    Patent number: 6372559
    Abstract: A method of forming a self-aligned vertical double-gate metal oxide semiconductor field effect transistor (MOSFET) device is provided that includes processing steps that are CMOS compatible.
    Type: Grant
    Filed: November 9, 2000
    Date of Patent: April 16, 2002
    Assignee: International Business Machines Corporation
    Inventors: Scott Crowder, Michael J. Hargrove, Suk Hoon Ku, L. Ronald Logan