Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

Abstract: Provided is a vertical magnetic recording head having a main pole, a return yoke, and a coil, all of which are formed on a substrate, and a method of manufacturing the same. The main pole includes a vertical portion which is vertical to the substrate, a horizontal portion that connects a lower part of the vertical portion to the return yoke, and a main pole tip formed on the vertical portion of the main pole. The main pole tip has a conical shape vertical to the substrate.