Patents Represented by Attorney Hall, Vande Sands and Pequinot

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  • Method of making atomic integrated circuit device
    Patent number: 7118942
    Abstract: A method of mass-producing a solid state device comprises providing an atomically smooth, solid state material layer no more than 40 Angstroms thick. This layer is uniformly and defect-freely bonded onto a substrate to provide an acceptable device yield.
    Type: Grant
    Filed: July 29, 2003
    Date of Patent: October 10, 2006
    Inventor: Chou H. Li