Abstract: It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelectricity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.
Abstract: A light source device includes at least one discharge tube, a discharge medium sealed inside the discharge tube, and first and second electrodes for exciting the discharge medium. The first electrode is arranged inside the discharge tube. The second electrode is in contact with an outer surface of the discharge tube at a plurality of linear contact portions. The plurality of linear contact portions are substantially parallel with each other. Thus, a light source device is provided in which the occurrence of constricted discharge can be suppressed readily.
Type:
Grant
Filed:
November 20, 2002
Date of Patent:
September 20, 2005
Assignee:
Matsushita Electric Industrial Co., Ltd.