Abstract: A multistable or memory electron beam addressed electroluminescent display panel is provided. The display panel is electron beam activated in the presence of an A. C. field, without the need of prior art flood guns. The panel may be activated or switched by direct electron beam activation of an electroluminescent film or by electron beam induced light radiation from a cathodoluminescent layer or from an insulating layer.

Abstract: This invention is concerned with a reversible electrochromic display device wherein its electrochromic activity is derived from an electrochromic active molecules which are attached to a porous polymeric resin.

Abstract: The invention provides a method for forming a protective silicon carbide (SiC) film on a silicon (Si) substrate. The method permits the formation of silicon carbide on the Si substrate on all surfaces simultaneously. The process is highlighted in that the silicon substrate to be coated is placed in a susceptor having tantalum carbide surfaces and which has a high purity ambient. The substrate is heated at a temperature about 1250.degree. C to remove native SiO.sub.2 from its surface. The system is then cooled to a temperature of about 900.degree. C and methane is added for about 30 minutes to thereby deposit a layer of carbon which is further reacted with the Si substrate at 1250.degree. C to form a smooth, pin hole free SiC film. SiC layers are also formed by a one step reaction in which methane is reacted directly with Si at 1250.degree. C.

Abstract: A method for preparing matted display electrodes is provided. The electrodes are initially chemically treated in a solution to form a compound on said electrodes which is insoluable in said solution. Finally, the electrodes treated in a second solution which dissolves said compound.

Abstract: This application is directed to highly conducting organometallic polymers having the following recurring units ##STR1## where M is at least one multivalent metal.

Abstract: A method of optically printing conductive characters using charge transfer compounds is provided. The method is characterized by depositing an organic .pi. electron donor compound dissolved in a halogenated hydrocarbon (halocarbon) on a suitable substrate and selectively exposing the so coated substrate to actinic radiation to obtain a permanent, highly conductive, image.

Abstract: A method of depositing conducting patterns on a large area surface is disclosed. The method is characterized by photochemically depositing an electrically conducting organic .pi.-electron donor compound on an insulating surface and selectively depositing a metal onto the established conductive pattern while simultaneously removing the organic film.

Abstract: A method of optically printing conductive characters using charge transfer compounds is provided. The method is characterized by depositing an organic .pi. electron donor compound dissolved in a halogenated hydrocarbon (halocarbon) on a suitable substrate and selectively exposing the so coated substrate to actinic radiation to obtain a permanent, highly conductive, image.

Abstract: Organic molecules can be coupled via their selenocarbonyl derivatives. Generally, the synthesis can be described by the following reaction equation: ##STR1## where C can be a cyclic or heterocyclic organic compound and R can be alkoxy, phenoxy or phenyl, preferably CH.sub.3 O, C.sub.2 H.sub.5 O, C.sub.6 H.sub.5 O, C.sub.6 H.sub.5 and the like. The reaction is usually carried out in a refluxing solvent, the choice of the solvent being determined by the stability and by the ease of coupling of a particular substrate. Groups that tend to stabilize the selenocarbonyl require higher boiling solvents and longer refluxing times. Aromatic solvents, such as benzene or toluene are well-suited for the coupling reaction. In some cases, refluxing the substrate in the alkoxy-phosphorus base as solvent may be advantageous. This new coupling procedure permits the synthesis of the hitherto unknown compounds: tetraselenofulvalene (TSeF), the selenium analogue of tetrathiofulvalene (TTF), and diselenodithiofulvalene (DSeDTF).

Abstract: High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutual exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5.times.10.sup.-.sup.6 coulombs/cm.sup.2.

Abstract: New 2,4,6 trisubstituted pyridines are useful as laser dyes. These dyes are used in solution with a non-interfering solvent to form lasing media useful in dye lasers. When excited, these dyes have emission wavelengths which cover the spectrum from 410-570 nm. The violet and near ultra-violet regions of the visible spectrum are particularly well-served by the new compounds.

Abstract: The disclosed method is one which provides an extremely thin substrate upon which there can be laid down a high resolution pattern of material such as metal by an electron beam fabrication technique. The latter technique is one wherein a resist is placed on the surface of the substrate. Thereafter, an electron beam is utilized to expose the resist in the desired pattern. The exposed resist is then removed and the metal or other material is laid down on the locations where the resist has been removed. With the use of the very thin substrate, the amount and effect of electron backscattering is substantially minimized whereby the consequent decrease of resolution due to exposure of the resist with the backscattered electrons is effectively eliminated. Accordingly, the resist exposure can be confined to much narrower widths than heretofore possible with known electron beam fabrication techniques.

Abstract: There is disclosed herein a relatively low-cost, high density postable storage medium which comprises adjacent thin layers of two or more materials which react upon heating to form a reaction product with optical, magnetic or electrical properties different from the corresponding properties of the reactant materials. Thus, utilizing reactant layers such as aluminum and selenium, the heating results in a reaction product of Al.sub.2 Se.sub.3. The heating agent is notably a laser beam.

Abstract: There are described herein organic electronic devices of the acceptor-donor (A-D), acceptor-donor-acceptor (A-D-A), donor-acceptor-donor (D-A-D), acceptor-donor-acceptor-donor (A-D-A-D), types analogous to the p-n, p-n-p, n-p-n and p-n-p-n types in typical semiconductor devices. The A-D device suitably comprises a support or substrate upon which there is provided a layer of a conductive metal. On this metallic layer, there is provided in a thickness of about 25 to 50 Angstroms, a barrier layer organic compound. On the latter compound, there is provided a deposited metal conductor, the metal depositing suitably being effected by a technique such as vapor deposition. The A-D-A and D-A-D devices comprise a semiconductor or metallic body, on each surface of which there is provided in about a 25 to 50 Angstrom thickness, the aforementioned barrier layer compound. On each compound layer there is deposited a metal conductor. The barrier layer compound suitably is one whose molecules consist of two nonsymmetric, i.e.