Patents Represented by Attorney, Agent or Law Firm Harness, Dickey & Plerce, P.L.C.
  • Method for forming fine patterns through effective glass transition temperature reduction
    Patent number: 6730458
    Abstract: A method for forming fine patterns, particularly contact holes, on semiconductor devices by forming an ArF resist pattern and then reducing the size of pattern openings by exposing the resist pattern to radiation from an VUV (vacuum ultraviolet) excimer laser or E-beam radiation during thermal treatment to reduce, temporarily, the Tg of the resist pattern and allow it to flow, thereby reducing the size of the spaces and openings in the pattern.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: May 4, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyunwoo Kim, Sanggyun Woo