Abstract: A memory transistor includes a body of semiconductor material having therein a channel region of one conductivity type and source and drain regions of the opposite conductivity type. A channel insulation is on the surface of the semiconductor body and extends over the channel region. The channel insulation includes a first layer of silicon dioxide directly on the surface of the semiconductor body and a layer of silicon nitride on the silicon dioxide layer. A gate of conductive polycrystalline silicon is preferable provided on the channel insulation. The channel of the transistor is sufficiently narrow so that electrons can be avalanched into the interface between the silicon nitride layer and the silicon dioxide layer completely across the full width of the channel where the electrons can be stored.

Abstract: A method and means for translating frequencies, as for example, to correct a frequency error .DELTA.f.sub.d introduced into a carrier signal of frequency f.sub.c, comprising means for dividing the resultant signal frequency (f.sub.c +.DELTA.f.sub.d) by N, resulting in a divided-down frequency (f.sub.c /N+.DELTA.f.sub.d /N), with .DELTA.f.sub.d being reduced to .DELTA.f.sub.d /N, and then heterodyning the divided-down frequency with signal of frequency (f.sub.c +f.sub.c /N) to produce a resultant signal of frequency (f.sub.c +.DELTA.f.sub.d /N), the frequency error remaining at its low, divided level .DELTA.f.sub.d /N.

Abstract: A digitized multifrequency tone generator comprising a memory having N readable word locations with each location containing an amplitude representing binary word, and with the total N binary words sequentially and collectively representing a period T.sub.o of the waveform of a multifrequency tone such as a chime with certain harmonics contained therein. Memory scanning signals of frequencies Nf.sub.o, where f.sub.o =f.sub.1, f.sub.2 . . . f.sub.n, are each employed, one at a time in a predetermined chime sequence, to repeatedly and sequentially read the N words from the memory to form a sequence of chimes each of whose fundamental tone frequencies is equal to the employed scanning frequency f.sub.o =f.sub.o1, f.sub.o2 . . . f.sub.n, with the said harmonics being reproduced at the proper frequency relative to each scanning frequency. A digital-to-analog device converts the read out binary words to form the aforementioned waveform.

Abstract: A fiber-optic face plate is mounted across the light emitting surface of an electroluminescent semiconductor element so that the light emitted from the semiconductor element passes through the face plate. The electroluminescent semiconductor element may be enclosed in a housing with the face plate extending across and being hermetically sealed to an end of the housing.

Abstract: An optical fiber and an electroluminescent semiconductor diode are each secured to separate mounting blocks which in turn are secured to each other, either directly or through an additional block, with the optical fiber aligned with the output of the diode. The mounting blocks are secured together by a thin layer of a bonding material which is preferably fast setting so as to prevent or limit relative movement between the mounting blocks which could cause misalignment of the optical fiber and the diode. The bonding material is preferably of the type which is cured when subjected to ultraviolet light, and at least one of the mounting blocks is preferably transparent to the ultraviolet light.

Abstract: A method of pattern generating a circuit film and adjacent barrier film on a substrate. A continuous layer of circuit film is applied to the substrate surface, and a photoresist pattern is delineated on the circuit film such that the photoresist remains on the circuit film pattern area. The area of circuit film not covered by photoresist is then removed, exposing the substrate surface. While retaining the photoresist which covers the circuit film pattern, the entire substrate surface is coated with the barrier film. The remaining photoresist is then removed, causing the barrier film which covers it to lift off, thereby exposing the circuit film pattern.

Abstract: A first reference voltage which exhibits a negative coefficient of change with temperature is developed as an offset potential across a forward-biased semiconductor junction or a series string of such junctions operated at an absolute temperature T. A second reference voltage which varies in linear proportion to the absolute temperature T is additively combined with the first reference voltage to simulate a higher density of forward current flow through the semiconductor junctions.

Abstract: The current through the main conduction path of a gate-turn-off silicon controlled rectifier (GTO) charges a capacitor in the cathode circuit of the rectifier. The GTO is turned off by providing a discharge path for the capacitor via the cathode-to-gate electrode of the GTO. A diode in the charging path of the capacitor becomes back-biased during discharge of the capacitor, thereby preventing the load in the cathode circuit of the rectifier from bypassing any of the discharge current.

Abstract: A semiconductor device having a pair of laterally spaced multiple-layer metal films, each located in a different vertically-spaced parallel plane on a body of a single crystalline semiconductor material and a channel between the spaced edges of the pair of metal films. The edges of the pair extend in cantilever fashion over the channel. First and second laterally spaced Schottky-barrier metal films are located in the channel and form gate contacts. The first metal film is located completely beneath the uppermost multiple-layer film. The second metal film is located substantially below an aperture formed between the pair of multiple-layer metal films. A contact pad for the first film is on the outside of the channel near one end thereof, and a contact pad for the second film is located near the other end. The Schottky-barrier films are typically less than 0.8 micrometers wide.

Abstract: A high input impedance circuit is employed to sense the condition of a bridge such as a Wheatstone bridge containing ionization chambers for smoke detection. The circuit comprises two CMOS inverters connected to operate as a differential signal detector, one inverter connected at its gate electrodes to one output terminal of the bridge and the other similarly connected to the other output terminal of the bridge. The system includes a simple null and sensitivity adjustment.

Abstract: The bipolar signals produced, for example, by a magnetic transducer which senses the positions of slots in a ferromagnetic damper wheel, are integrated. The resulting integrated signal has peaks at times corresponding to the zero crossings of the bipolar signals and is of lower, relatively constant, amplitude at other times. The peaks may be used to prime an otherwise disabled circuit in the path through which signals indicative of zero crossings are transmitted to thereby discriminate between zero crossings of interest (those of the bipolar signals) and those due to noise.

Abstract: The amplitude is detected of both the input and output signals of the circuit (such as an audio amplifier) it is desired to protect. When, for example, a short circuit occurs across the load being driven, there is a sudden change in the ratio of these amplitudes and in response to this change, the signal to the output driver stage of the circuit is shunted to ground.