Abstract: A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.

Abstract: A bonded wafer with a bond junction having low resistivity due to the low level of oxides at the bond junction. A plasma that removes native oxide layers from wafers is exposed to the wafers. The plasma forms a hydrophobic polymer seal on the wafers, inhibiting subsequent native oxide growth upon exposure to air. The polymer seal on the wafers to be bonded are pressed together and the wafers are annealed to form the bonded wafer in a non-oxidizing ambient. The bond junction formed is primarily silicon to silicon and silicon to carbon bonds.

Abstract: A composition for optimally removing or etching metallic alloys from chemically compatible substrates with minimal damage to the substrate. The preferred composition is Ammonium Fluoride, Hydrofluoric Acid, Nitric Acid, Phosphoric Acid and Water in a specified range of quantities used to selectively remove an Aluminum and Silicon Alloy and Titanium film from a chemically compatible substrate. The composition is placed in contact with Stainless Steel, Silicon, or other organic or metallic substrates to remove, etch, or pattern homogenous or layered Aluminum, Silicon, Titanium and Copper Alloys from the substrate with minimal etching to the underlying substrate.