Abstract: A semiconductor memory device is provided, which prevents the characteristic of storage capacitors from degrading without chip-area increase of memory cells. Each of storage capacitors has a dielectric sandwiched by lower and upper electrodes. The lower electrodes are formed by a patterned, common electrically-conductive layer. The dielectrics are formed by a patterned, common ferroelectric layer formed on the common electrically-conductive layer which is entirely overlapped with the common electrically-conductive layer. The upper electrodes are regularly arranged on the common ferroelectric layer and are located outside the rows and columns of a matrix array where the windows of the common electrically-conductive layer and common ferroelectric layer are aligned. Wiring lines are formed over the upper electrodes through an interlayer insulating layer covering the storage capacitors, thereby electrically connecting the upper electrodes and select transistors.

Abstract: The present invention enables to preferably correct mark patterns reproduced in parallel from a magnetic tape. A mark detection block 204 successively identifies as one of the plurality mark patterns a plurality of binary data reproduced in parallel from the magnetic tape, and confirms a mark pattern whose reproduction time has reached a reference time. A mark holding block 211 holds a mark pattern whose reproduction is integrated. A mark pattern discontinuity detection block 121 detects a discontinuity and the discontinuity integrating block 213 counts the number of discontinuity times. This discontinuous number of times and the mark pattern held are output together with the confirmed mark pattern, thus correcting the mark pattern appropriately.

Abstract: A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.

Abstract: A skin for an automotive interior trim panel is provided comprising a first skin portion and a second skin portion. First skin portion comprises a receptacle and a second skin portion comprises a protrusion. When connected, a portion of the protrusion in mechanical engagement with a portion of the receptacle to join the first skin portion and the second skin portion.

Abstract: A tow bar for connecting a vehicle to an object to be towed which reduces impact related structural damage to the vehicle. The tow bar is positioned within the vehicle bumper wherein the bumper contains a section for concealing the tow bar and wherein the tow bar positioned within the bumper, when in a non-towing mode, is movable relative to the bumper, and wherein the tow bar can also be configured into a non-slidable towing configuration.

Abstract: Thermal dispersion probes used as flowrate sensors in process control of a medium heated by a heater. The device includes a reference temperature sensor for producing an electrical signal indicative of the temperature of the medium in which it is immersed, and an active temperature sensor for producing an electrical signal indicative of the temperature of the medium adjacent the heater. The temperature difference between the active sensor and the reference sensor is processed in a processor which varies the heater power to maintain the temperature differential between the active sensor and the reference sensor within a predetermined range, whereby the predetermined range provides an optimal sensitivity for the probes.

Abstract: Boron ions are implanted in the boundary of the field oxide film and P type well, and a first high energy boron implantation P layer is formed. Further boron ions are implanted near the center of the field oxide film in the thickness direction, and a second high energy boron implantation P layer is formed. The first and second high energy boron implantation P layers are spaced away from the N type diffusion layer.

Abstract: A fuel filler door actuator is provided having a locking arm and an alternate action mechanism. The locking arm is selectively driveable by an electric motor to engage or disengage with the fuel filler door of an automobile. The alternate action mechanism, including a spring-biased plunger having a cam track with a cam follower riding in the track, is engageable by and mounted adjacent to the fuel filler door and is capable of linear movement with respect to the door by alternating between an inward recessed position and an outwardly extended position each time an inward force is applied to the door. In the event of a loss of electrical power to the actuator, a manual override mechanism is provided which allows unpowered opening of the fuel door.

Abstract: While shortening a trace processing time duration of checking a target program, the target program is simply checked in a high speed. When historical data acquired by executing this target program is supplied, the historical data is converted into trace packet data. The trace packet data is temporarily stored into a trace packet buffer. When the storage content of the trace packet buffer is brought into an overflow state, the trace packet data and store-impossible data are stored into an external storage apparatus.

Abstract: A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.

Abstract: A motor allowing multiple degrees of output freedom. The motor includes a stator having an interior surface forming at least a portion of a sphere or curved surface and first and second substantially orthogonally positioned stator coils wound on the interior surface. A rotor is fixed to the output shaft and movably supported adjacent the stator with an air gap disposed between the rotor and the stator. The rotor includes a plurality of magnets disposed thereon and is movable along the interior surface in directions defining at least first and second degrees of freedom. Upon energization of the first stator coil, a first magnetic field is established to force at least a first one of the magnets and the rotor in a direction in the first degree of freedom. Upon energization of the second stator coil, a second magnetic field is established to force at least a second one of the magnets and the rotor in a direction in the second degree of freedom.

Abstract: A method for fabricating an electric double-layer capacitor includes the steps of contacting a polarized electrode which includes a polymer having no bridge structure therein and activated carbon and a collector which includes a polymer and conductive additives, exposing the polarized electrode and the collector to electron beam to form a bridge structure therebetween. The electric double-layer capacitor having the polarized electrode and the collector thus formed has a low equivalent serial resistance and can be manufactured with a higher throughput.

Abstract: A secondary battery according to the present invention includes a case for accommodating an electrode element therein and a conductive lid element for closing an open end of the case. A plurality of electrode terminals extend from the top and bottom of the electrode element. The plurality of electrode terminals extending from the top of the electrode element are electrically connected to one end of a collecting terminal with a metallic grommet. The other end of the collecting terminal is connected to the back of the lid element, and thus the plurality of electrode terminals are electrically connected to the lid element through the grommet and the collecting terminal.

Abstract: A method for establishing conditions of making an index representing characteristics of a MOSFET in a permitted range by means of differentially injecting ions into a wafer. The method includes the steps of: making a curve indicating an amount of energy contamination with respect to a junction depth, and determining a permitted amount of energy contamination with respect to a desired junction depth. A MOSFET having substantially no deterioration of the characteristics can be obtained by referring to the curve, and establishing a degree of vacuum of and/or a distance of a beam line.

Abstract: A semiconductor device with a multilevel interconnection has hydrogen silsesquioxane films which are made porous by etching action of hydrogen fluoride or by ion-implantation of impurities containing fluorine, as an interlayer insulating film for filling up a space between wires. Consequently, a dielectric constant of HSQ is low and wiring capacitance of the multilayer interconnection can be reduced.

Abstract: Dents are formed on the silicon oxide film 3 formed on a silicon substrate 1; thereon are formed a barrier metal film 4 and a copper plating film 5 in this order. Then, chemical mechanical polishing is conducted for planarization. Polishing is conducted for a given time and, when the barrier metal film 4 has been exposed, a hydrofluoric acid-containing solution is fed. As the hydrofluoric acid-containing solution, a buffered hydrofluoric acid or the like is used.

Abstract: A process for imaging a lithographic printing plate having a coating containing diazo resins. An ink jet printer is used to apply micro drops of a basic chemical solution that insolubilizes the affected areas of the coating to a developing solution. The latent image may be cured by heating the plate for a short period, and is then developed. The process works with conventional, commercially available lithographic plates and developers.

Abstract: A site access log analyzing method of analyzing and grasping how a site is utilized by users which is provided in a server on a computer network to which a plurality of computers are connected through a communication cable, the method comprising the step of transferring access logs to a server in response to the request of the server and time sequentially storing them in a memory of a computer of the site users. With this arrangement, even if a user moved to a plurality of servers, the access log information thereof is time sequentially stored in the user's computer. Thus, site managers can grasp how the user has used content files and how the user has moved in the content files when necessary by transferring the access log information to the servers and storing it in them.

Abstract: A semiconductor memory in which a layout margin at the contact hole between wiring layers of a SRAM does not need and the wiring capacity at bit lines is reduced and the high speed processing is made to be possible is provided. The SRAM is constituted of a pair of driving transistors Qd1 and Qd2, a pair of transferring transistors Qt1 and Qt2, high resistance loads R1 and R2, a pair of bit lines BL1 and BL2, and a VCC line and a GND line. Gate electrodes of each transistor and word lines are formed at a first layer, the high resistance loads are formed at a second layer, the VCC line and the GND line are formed at a third layer, and the bit lines are formed at a fourth layer. A shared contact hole using for connecting the high resistance loads to the source/drain area of transistors does not penetrate the other conductive layers. Therefore, the layout margin between the shared contact hole and the other conductive layers becomes unnecessary and the reduction of the cell size becomes possible.