Patents Represented by Attorney Haynes Beffel & Wolffeld LLP
  • Patent number: 7442603
    Abstract: A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying the substrate body, a programmable resistive memory material overlying the first conductive material, a high selective material overlying the programmable resistive memory material, and a silicon nitride material overlying the high selective material. The high selective material in the pillar is isotropically etched on both sides of the high selective material to create a void on each side of the high selective material with a reduced length. A programmable resistive memory material is deposited in a confined area previously occupied by the reduced length of the poly, and the programmable resistive memory material is deposited into an area previously occupied by the silicon nitride material.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: October 28, 2008
    Assignee: Macronix International Co., Ltd.
    Inventors: Erh-Kun Lai, ChiaHua Ho, Kuang Yeu Hsieh, Shih-Hung Chen