Abstract: A method for receiving and quantizing a data set originating from collected data is provided. The data set has a plurality of dimensions defined by perpendicular axes, and includes a plurality of data points. Each data point has a data characteristic.

Abstract: A trench MOSFET device and method of making the same.

Abstract: A bi-directional transient voltage suppression device is provided. The device comprises: (a) a lower semiconductor layer of p-type conductivity; (b) an upper semiconductor layer of p-type conductivity; (c) a middle semiconductor layer of n-type conductivity adjacent to and disposed between the lower and upper layers such that lower and upper p-n junctions are formed; (d) a mesa trench extending through the upper layer, through the middle layer and through at least a portion of the lower layer, such that the mesa trench defines an active area for the device; and (e) an oxide layer covering at least portions of the walls of the mesa trench that correspond to the upper and lower junctions, such that the distance between the upper and lower junctions is increased at the walls. The integral of the net middle layer doping concentration of this device, when taken over the distance between the junctions, is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.