Abstract: A semiconductor crystal resistivity measuring station comprised of an enclosed automatically operated probe apparatus electrically connected to a remotely controlled power supply and an electronic computer for automatically executing precise electrical resistivity measurements, in consecutive increments along a single crystal length.

Abstract: A metallization system for metallurgically bonding a semiconductor die to metallic conducting slugs as terminals at the same time, and at the same temperature, that a surrounding glass sleeve is hermetically sealed to the conducting slugs for forming a zener diode, for example, is disclosed. The metallization system comprises a combination of aluminum, tin and palladium, for bonding to molybdenum, the aluminum being vapor deposited followed by a vapor co-deposition of aluminum and tin and further followed by a vapor deposited layer of palladium.

Abstract: There is disclosed a multicolor monolithic light display comprising a pair of matrices of light emitting diodes in an integral structure which pair of matrices are alternately or simultaneously scannable to produce a red, green or orange display. One matrix includes a plurality of gallium arsenide phosphide (GaAs.sub.X P.sub.1.sub.-X) red light emitting diodes while the other matrix includes gallium phosphide green light emitting diodes. The light emitting diodes are arranged in a geometric pattern of columns and rows with the first matrix interposed with the second matrix so that an alphanumeric character produced by one matrix will appear at almost the same physical location as a character of the alternate color.

Abstract: There is disclosed a monolithic light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display. Each of the light emitting diodes is electrically isolated from each other diode in a supporting carrier, with the cathodes of the diodes connected in a series of groups by address lines and anodes connected in an orthagonal plurality of groups by bit lines or column lines. A strobing format logic address system is provided for lighting the individual diodes to emission for producing an alpha numeric character.There is also disclosed a method of making the foregoing which comprises moat etching a semiconductor substrate of a first conductivity to form a plurality of mesas in an orthagonal pattern desired for the ultimate alpha numeric display. A region of the opposite conductivity is then produced on the moat etched surface of the substrate by diffusing a suitable dopant therein.

Abstract: There is disclosed a method of manufacturing the foregoing which comprises placing an epitaxial layer of a first conductivity type semiconductor material upon a substrate of semiconductor material having an intrinsic or semi insulating conductivity. Then channels are etched through the epitaxial layer to the semi insulating semiconductor substrate, thereby forming the epitaxial material into a plurality of parallel ribs or ridges. After coating the entire surface of the channels and the ridges with a dielectric layer, a conductive material is deposited over the substrate to fill the channels with the conductive material which may be either a metal or polycrystalline silicon doped to have sufficient conductivity.

Abstract: There is disclosed a process for the hydrogen reduction of silicon tetrachloride to produce trichlorosilane. In accordance with the process, hydrogen and silicon tetrachloride vapors are passed through a reaction chamber at relatively high flow rates with approximately 50 mole percent silicon tetrachloride in the mixture. The reaction vessel is held at a temperature of between 900.degree. and 1200.degree. C. This process is a part of an overall system for the production of polycrystalline silicon for the semiconductor industry.

Abstract: A process for the stabilization of an aluminum part, such as a semiconductor lead frame, which includes the step of coating said aluminum part with an alcohol solution containing boron, phosphorous and a metal selected from the group consisting of gold, palladium, rhodium and platinum. The solution is prepared by mixing phosphorous pentoxide in an alcohol solvent. The dissolution of the phosphorous pentoxide is exothermic and the temperature of the solution will rise during the reaction. Then, boric anhydride and a salt of gold, palladium, rhodium or platinum is added. The solution strips any aluminum oxide from the surface of the part while also removing any organic contamination and while depositing a layer of the gold, platinum, rhodium or palladium onto the surface of the aluminum part. The process is particularly advantageous for preparing aluminum lead frames for wire bonding during semiconductor device assembly.

Abstract: A bilateral zener diode is described having improved terminal characteristics including a low noise factor, a predictable breakdown voltage level in the reverse breakdown mode within plus or minus 3 percent, and providing a sharp reference voltage which is substantially independent of diode current. This bilateral conducting diode is achieved by utilizing a collector ring diffusion of the same conductivity type as the anode diffusion, but spaced from both the anode diffusion and the cathode diffusion. In the forward bias conduction mode, the flow of current from the anode to the cathode is collected by the collector ring and returned to the cathode providing a forward transfer efficiency which is typically 90 percent.