Abstract: In magnetic bubble memories both linear and switched drive circuits are presently in use. The linear circuit can employ a capacitor to achieve resonance and may operate at a relatively high efficiency. However, when a linear coil drive circuit, which had been designed to operate at resonance, is operated just off resonance a substantial loss of power efficiency is observed. A switched coil drive circuit is described herein which achieves high operating power efficiency by using a capacitor in parallel with the bubble coil.
Type:
Grant
Filed:
August 11, 1980
Date of Patent:
June 29, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: Silicon-rich silicides of titanium and tantalum have been found to be suitable for use as the gate metal in semiconductor integrated circuits replacing polysilicon altogether. Such silicon-rich silicides, formed by sintering a cosputtered alloy with silicon to metal ratio of three as in deposited film, are stable even on gate oxide. The use of these compounds leads to stable, low resistivity gates and eliminates the need for the high resistivity polysilicon gate.
Type:
Grant
Filed:
August 18, 1980
Date of Patent:
June 29, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: Operating margins for major-minor magnetic bubble memories are improved by use of protective rails between minor loops to prevent loss of information due to stripout. The rails, as are the propagation paths, are defined by unimplanted regions in an otherwise ion-implanted layer. In another embodiment, unimplanted rectangular islands are used rather than rails.
Type:
Grant
Filed:
September 4, 1980
Date of Patent:
June 8, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
Joseph E. Geusic, Dirk J. Muehlner, Terence J. Nelson
Abstract: The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Type:
Grant
Filed:
January 22, 1981
Date of Patent:
June 1, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
Hyman J. Levinstein, Shyam P. Murarka, Ashok K. Sinha
Abstract: A magnetic bubble memory herein includes a detection circuit which responds to changes in data signal which occur in consecutive detection intervals. In one embodiment changes from both 0 to 1 and from 1 to 0 are used. Improved operating margins result. Correlated coding techniques are shown to preclude propagation of errors.
Type:
Grant
Filed:
June 23, 1980
Date of Patent:
March 2, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A conductor-access, magnetic bubble memory organized in the major-minor mode has minor loops separated into minor loop segments. The segments can be powered for moving bubbles selectively only within the corresponding segments of the minor loops. A transfer operation moves bubbles between minor loop segments permitting bubble movement to the major loop. The ability to move bubbles only in a selected set of corresponding segments of the loops at a time permits operation with highly attractive power requirements.
Type:
Grant
Filed:
December 20, 1979
Date of Patent:
February 2, 1982
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: Logic circuits, particularly of the integrated semiconductor type, are accessed at improved speeds by preventing pull-ups from occurring during the access time and by the inclusion of on-chip delay circuitry to avoid switching later stages in a manner to lose information while output nodes of earlier stages are high. All stages are activated in response to a single clock pulse edge.
Type:
Grant
Filed:
September 21, 1979
Date of Patent:
September 22, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
James A. Cooper, Jr., Robert H. Krambeck
Abstract: A gap between sets of contiguous discs defined by nonimplanted regions in an otherwise ion-implanted bubble layer allows an isolation between bubbles which leads to the achievement surprisingly close spacing between neighboring bubble paths. The misalignment of the gap axis with an axis of symmetry of the bubble layer is an important consideration in realizing the isolation.
Type:
Grant
Filed:
December 3, 1979
Date of Patent:
August 11, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Type:
Grant
Filed:
December 29, 1978
Date of Patent:
June 30, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
Hyman J. Levinstein, Shyam P. Murarka, Ashok K. Sinha
Abstract: A gap between sets of contiguous discs defined by unimplanted regions in an otherwise ion-implanted bubble layer allows a merge function to be achieved. The alignment of the gap axis with an axis of symmetry of the bubble layer and the width of the gap are important considerations in the performance of the merge.
Type:
Grant
Filed:
December 3, 1979
Date of Patent:
June 30, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A permalloy detector for a magnetic bubble memory employs a stack of chevron elements astride the bubble path. Alternate ones of the elements are positioned at an angle to the path of bubble propagation smaller than the angle at which the remaining elements are positioned. The result is that one set of elements moves a stretched bubble to a position at which the remaining elements accomplish detection. The result is a clearer output signal which is relatively easy to detect.
Type:
Grant
Filed:
June 23, 1980
Date of Patent:
June 23, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A replicator for an ion-implanted magnetic bubble memory includes an offset hairpin geometry. The conductor is associated with features in adjacent bubble paths which exhibit strong attracting poles at the same time. The conductor stretches the bubble between the attracting poles. The bubble is severed by the reorienting propagation field.
Type:
Grant
Filed:
December 3, 1979
Date of Patent:
February 24, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A magnetic bubble memory of the G-shaped organization is implemented by ion-implantation. Attractive operating margins are realized by the use of transfer-out arrangements which moves bubbles in parallel first to an auxiliary path and thereafter to the major loop in a manner to invert the data.
Type:
Grant
Filed:
December 3, 1979
Date of Patent:
February 3, 1981
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: The familiar G-shaped, non-closed, major path in a major-minor, magnetic bubble memory is formed controllably into a closed circumferential major loop about the minor loops during operation. A simple data format allows a simple start-up algorithm to ensure that data are secured.
Type:
Grant
Filed:
March 7, 1979
Date of Patent:
December 9, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A magnetic bubble memory herein includes a direct propagation path between a bubble generator and a detector. A control circuit is adapted to store indications of the current state of the memory and the address of presently accessed data in the path responsive to a power failure signal. Portions of the memory are organized in a familiar major, minor mode, data from two major loops being replicated into the direct path.The arrangement exhibits improved access times, improved data rates and is secure from power failure problems. Moreover, the memory organization permits the realization of large capacity chips without requiring block replication.
Type:
Grant
Filed:
November 15, 1978
Date of Patent:
December 2, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: Continuous film type, current-access bubble memories are designed for low power operation by including, along the current paths, areas of reduced width. The areas of reduced widths are characterized by relatively high current densities, which are preferred, for example, for expansion detected or operation, without an increase in power consumption.
Type:
Grant
Filed:
March 8, 1979
Date of Patent:
October 14, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A charge transfer device includes two channels and a common input structure. The input structure is operated in a manner to divide a charge packet of signal-independent size into two complementary packets for movement along the two channels. A single-channel embodiment employs a similar input structure.
Type:
Grant
Filed:
May 12, 1978
Date of Patent:
July 1, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Inventors:
Ronald E. Crochiere, Carlo H. Sequin, Michael F. Tompsett
Abstract: The decoder portion of a programable logic array (PLA) includes logic devices at crosspoints defined between the word (x) lines and the address (y) lines characteristic of a decoder portion. The devices are operative to combine two or more word lines to activate a single word line in the associated read only memory (ROM) in response to one of two or more possible inputs. The technique is effective even in cases where "don't care" conditions relating the two or more possible inputs cannot be found. A substantial reduction in chip area is achieved.
Type:
Grant
Filed:
December 21, 1978
Date of Patent:
June 17, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: The numbers of gates necessary in an integrated combinatorial logic circuit is reduced by designing the circuit to accept an applied binary word of given length as a plurality of word segments having numbers of bits which add up to the number included in the applied word. A preprocessor responds to the word segments to generate a word characterizing the segments and to apply those words to an arithmetic logic unit designed to add binary words and to generate words having lengths of the applied words.
Type:
Grant
Filed:
December 15, 1978
Date of Patent:
February 19, 1980
Assignee:
Bell Telephone Laboratories, Incorporated
Abstract: A conductor access, magnetic bubble memory is organized in a major-minor mode by including transfer locations in the conducting layers which define the normal bubble propagation implementation. An attractive partitioning of each of the two conducting layers permits the minor loops and the major loop to be operated synchronously or independently resulting in short duty cycles which permit low power operation to be achieved.
Type:
Grant
Filed:
February 23, 1979
Date of Patent:
February 5, 1980
Assignee:
Bell Telephone Laboratories, Incorporated