Abstract: A storage cell is described which includes a storage element whose electric resistance represents an information unit and can be influenced by a magnetic field as well as a transistor which when the information is read out allows for the corresponding storage cell to be selected from among the storage cells. To write the information unit, a write line and a bit line are provided which intersect in the area of the storage element and are able to generate the magnetic field. The storage cell is disposed between the bit line and a shared voltage supply connection. The storage cell is disposed between the bit line and the write line and the write line can coincide with a gate line that controls the transistor. The transistor is a planar or vertical transistor. The storage element and the transistor can be positioned next to or on top of each other.

Abstract: Cooling device for semiconductor components, including a chamber for receiving semiconductor components, boiling liquid disposed in the chamber for immersing the semiconductor components, a device connected to the chamber for supplying a cooling air to eliminate a temperature rise of the boiling liquid and to remove a maximum power loss at a normal maximum ambient temperature, a thermal energy accumulator connected to the chamber, and a device for switching off the cooling air supply device and switching on the thermal energy accumulator if the ambient temperature of the cooling air rises.