Patents Represented by Attorney Herrity Snyder LLP

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  • Void free interlayer dielectric
    Patent number: 7307027
    Abstract: A method of forming a dielectric between memory cells in a device includes forming multiple memory cells, where a gap is formed between each of the multiple memory cells. The method further includes performing a high density plasma deposition (HDP) process to fill at least a portion of the gap between each of the multiple memory cells with a dielectric material.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: December 11, 2007
    Assignees: Advanced Micro Devices, Inc., Spansion LLC
    Inventors: Minh Van Ngo, Alexander Nickel, Hieu Pham, Jean Yang, Hirokazu Tokuno, Weidong Qian