Patents Represented by Law Firm Heslen & Rotherberg
  • Planarized semiconductor structure using subminimum features
    Patent number: 5453639
    Abstract: Improved, planarized semiconductor structures are described. They are prepared by a method which involves the creation of a series of subminimum (i.e., 50 to 500 Angstroms thick) silicon pillars extending vertically upward from the base of a wide trench, and oxidizing the pillars. When the substrate is covered with a conformal CVD oxide, the pillars prevent the formation of a single deep depression above the trench.
    Type: Grant
    Filed: October 27, 1993
    Date of Patent: September 26, 1995
    Assignee: International Business Machines Corporation
    Inventors: John E. Cronin, Howard S. Landis