Patents Represented by Law Firm Hickman and King
  • Patent number: 5172471
    Abstract: A CMOS integrated circuit assembly for providing reduced power supply and ground inductances has a first conducting layer which is formed over an insulating layer formed on top of the integrated-circuit chip. The first conducting layer is connected to wire bond pads which are wirebonded to a package. This first conducting layer forms a single, low-inductance conductor for a VDD supply voltage and extends over a substantial area so that it has an inductance significantly less than the inductance of a conventional conductor. A second conducting layer is forms a low-inductance VSS conductor. Power can be selectively distributed through conductive layers of this to provide power supply isolation between selected circuits of the integrated circuit.
    Type: Grant
    Filed: June 21, 1991
    Date of Patent: December 22, 1992
    Assignee: VLSI Technology, Inc.
    Inventor: Chin C. Huang