Patents Represented by Law Firm Hickman Bever & Weaver
  • Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
    Patent number: 5705419
    Abstract: In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
    Type: Grant
    Filed: July 27, 1994
    Date of Patent: January 6, 1998
    Assignee: National Semiconductor Corp.
    Inventors: Jeffrey Robert Perry, S. M. Reza Sadjadi, Kristen Ann Luttinger