Patents Represented by Law Firm Hickman Peyer & Weaver
  • Dry etching of transparent electrodes in a low pressure plasma reactor
    Patent number: 5667631
    Abstract: A method for dry etching an indium tin oxide (ITO) layer disposed above a substrate in a low pressure plasma reactor is disclosed. The method includes a step of placing a substrate having the ITO layer into the low pressure plasma reactor, a step of introducing an etchant gas into the low pressure plasma reactor; a step of striking a plasma from the etchant gas in the low pressure plasma reactor; and a step of etching the ITO layer with the plasma.
    Type: Grant
    Filed: June 28, 1996
    Date of Patent: September 16, 1997
    Assignee: Lam Research Corporation
    Inventors: John P. Holland, Alex T. Demos