Abstract: A field effect transistor having an extremely short channel length in which a semiconductor substrate of one conductivity type has source and drain zones of the opposite conductivity type. A first gate electrode is separated from the substrate surface by a first insulating layer. The substrate has a surface side counter zone doping extending between the source and drain with the exception of a narrow strip-like zone which directly adjoins the source. The strip-like zone and at least an adjoining part of the surface side counter doped zone is covered by the first gate electrode. A second insulating layer is formed on the first gate electrode and on the drain side edge face of the first gate electrode. A coating on the second insulating layer covering that portion of the first insulating layer not covered by the first gate electrode is formed. The source side edge of the coating determines the drain side boundary of the strip-like zone.